Inventor · disambiguated record
Jam-Wem Lee
Also filed as: LEE JAM-WEM
125 granted patents·30 pending applications·886 citations·filing 2001–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD108TAIWAN SEMICONDUCTOR MFG25LEE JAM-WEM11CHANG YI-FENG2SONG MING-HSIANG2
Top patents by PatentIndex Score
155 records- 0199US11158634B1Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·11 cites·20 claims
- 0297US12148746B2Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 19, 2024·3 cites·20 claims
- 0397US11908859B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·2 cites·20 claims
- 0497US11710962B2Device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·4 cites·20 claims
- 0597US11626719B2Electrostatic discharge (ESD) protection circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 11, 2023·7 cites·20 claims
- 0697US8735993B2FinFET body contact and method of making sameLO CHING-HSIUNG·Filed 2012·Granted May 27, 2014·412 cites·19 claims
- 0797US7964893B2Forming ESD diodes and BJTs using FinFET compatible processesTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jun 21, 2011·37 cites·20 claims
- 0896US11735587B2Backside PN junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·2 cites·20 claims
- 0996US7700449B2Forming ESD diodes and BJTs using FinFET compatible processesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Apr 20, 2010·41 cites·19 claims
- 1095US12051896B2Device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 1195US11862960B2Electrostatic discharge (ESD) protection circuit and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 2, 2024·2 cites·20 claims
- 1295US11862968B2Circuit and method for high voltage tolerant ESD protectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·19 claims
- 1395US11749673B2ESD protection deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
- 1495US9214540B2N-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD)TAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 15, 2015·19 cites·10 claims
- 1595US8759871B2Bidirectional dual-SCR circuit for ESD protectionSONG MING-HSIANG·Filed 2011·Granted Jun 24, 2014·31 cites·12 claims
- 1694US8928093B2FinFET body contact and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 6, 2015·14 cites·20 claims
- 1793US12087761B2Electrical passive elements of an ESD power clamp in a backside back end of line (B-BEOL) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
- 1893US11855073B2ESD structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1993US11728330B2Electrical passive elements of an ESD power clamp in a backside back end of line (B-BEOL) processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 2093US8476736B2Low leakage diodesLEE JAM-WEM·Filed 2011·Granted Jul 2, 2013·14 cites·6 claims
- 2193US8153493B2FinFET process compatible native transistorLEE JAM-WEM·Filed 2008·Granted Apr 10, 2012·25 cites·15 claims
- 2292US10643988B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·6 cites·20 claims
- 2392US9312384B2FinFET body contact and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·10 cites·20 claims
- 2492US8963200B2Methods and apparatus for increased holding voltage in silicon controlled rectifiers for ESD protectionLEE JAM-WEM·Filed 2012·Granted Feb 24, 2015·13 cites·19 claims
- 2592US8742491B2FinFET process compatible native transistorLEE JAM-WEM·Filed 2012·Granted Jun 3, 2014·13 cites·19 claims
- 2692US8400813B2One-time programmable fuse with ultra low programming currentLEE JAM-WEM·Filed 2009·Granted Mar 19, 2013·23 cites·20 claims
- 2791US11355491B2ESD protection deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 2890US11569223B2Integrated circuit and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·2 cites·20 claims
- 2990US11355927B2Device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·2 cites·20 claims
- 3090US8570698B2ESD protection for FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 29, 2013·11 cites·20 claims
- 3189US9887275B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 6, 2018·4 cites·20 claims
- 3289US9362266B1Electrostatic discharge protection device for differential signal devicesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·6 cites·20 claims
- 3389US8841696B2High-trigger current SCRLEE JAM-WEM·Filed 2012·Granted Sep 23, 2014·11 cites·20 claims
- 3489US8049250B2Circuit and method for power clamp triggered dual SCR ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·14 cites·20 claims
- 3588US10411005B2Intelligent diode structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 10, 2019·4 cites·20 claims
- 3688US9165829B2Double sided NMOS/PMOS structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·6 cites·20 claims
- 3788US2025366215A1High esd immunity field-effect device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3887US12396256B2Semiconductor device including transistors sharing gates with structures having reduced parasitic circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 3987US9209302B2Method of reducing the heights of source-drain sidewall spacers of FinFETs through etchingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 4087US8809961B2Electrostatic discharge (ESD) guard ring protective structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 19, 2014·7 cites·20 claims
- 4187US8541848B2High-voltage MOSFETs having current diversion region in substrate near fieldplateHUANG YUN-PEI·Filed 2011·Granted Sep 24, 2013·21 cites·15 claims
- 4286US10777547B2ESD protection deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 15, 2020·3 cites·20 claims
- 4386US10283210B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·4 cites·20 claims
- 4486US8587071B2Electrostatic discharge (ESD) guard ring protective structureTSAI TSUNG-CHE·Filed 2012·Granted Nov 19, 2013·10 cites·11 claims
- 4585US10109621B2Low-capacitance electrostatic damage protection device and method of designing and making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·4 cites·20 claims
- 4685US9214398B2Backside contacts for integrated circuit devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·5 cites·20 claims
- 4785US2025142950A1Backside pn junction diodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4884US11756953B2Electrostatic discharge protection deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 12, 2023·1 cites·20 claims
- 4984US11282831B2Semiconductor device having multiple electrostatic discharge (ESD) pathsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 22, 2022·2 cites·20 claims
- 5084US10109366B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·4 cites·20 claims
Showing the top 50 of 155 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →