Inventor · disambiguated record
Jaesoon Lim
Also filed as: LIM JAESOON
12 granted patents·6 pending applications·2 citations·filing 2009–2025
81Inventor score
Files withSAMSUNG ELECTRONICS CO LTD18
Top patents by PatentIndex Score
18 records- 0183US12453077B2Capacitor and memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 21, 2025·0 cites·18 claims
- 0281US12029027B2Capacitor and memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 0380US2025248022A1Capacitor and memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0472US12398166B2Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compoundSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·14 claims
- 0572US11678476B2Capacitor and DRAM device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·15 claims
- 0666US10847362B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Nov 24, 2020·1 cites·19 claims
- 0758US2025192006A1Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0857US7989877B2Semiconductor devices including a dielectric layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Aug 2, 2011·1 cites·10 claims
- 0956US2021032279A1Method of selectively forming cobalt metal layer by using cobalt compound, and method of fabricating semiconductor device by using cobalt compoundSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1055US2024021427A1Method of forming film and method of manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1154US11524973B2Metal compounds and methods of fabricating semiconductor devices using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 13, 2022·0 cites·20 claims
- 1254US10900119B2Tungsten precursor and method of forming Tungsten containing layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 26, 2021·0 cites·20 claims
- 1353US11081389B2Method of manufacturing semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 3, 2021·0 cites·20 claims
- 1453US2024162281A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1551US11466043B2Niobium compound and method of forming thin filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·0 cites·17 claims
- 1648US11254698B2Cobalt precursor and methods for manufacture using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·15 claims
- 1747US11332486B2Aluminum compound and method for manufacturing semiconductor device using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 17, 2022·0 cites·11 claims
- 1842US2020231610A1Tin compound, tin precursor compound for forming a tin-containing layer, and methods of forming a thin layer using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →