Inventor · disambiguated record
Jack H. Linn
Also filed as: LINN JACK · LINN JACK H · LINN JACK HOWARD
36 granted patents·2 pending applications·1,819 citations·filing 1992–2007
98Inventor score
Top patents by PatentIndex Score
38 records- 0196US5569620ABonded wafer processing with metal silicidationHARRIS CORP·Filed 1994·Granted Oct 29, 1996·194 cites·13 claims
- 0294US6465325B2Process for depositing and planarizing BPSG for dense trench MOSFET applicationFAIRCHILD SEMICONDUCTOR·Filed 2002·Granted Oct 15, 2002·127 cites·17 claims
- 0394US5849627ABonded wafer processing with oxidative bondingHARRIS CORP·Filed 1995·Granted Dec 15, 1998·178 cites·5 claims
- 0494US5387555ABonded wafer processing with metal silicidationHARRIS CORP·Filed 1992·Granted Feb 7, 1995·149 cites·8 claims
- 0591US5272104ABonded wafer process incorporating diamond insulatorHARRIS CORP·Filed 1993·Granted Dec 21, 1993·122 cites·17 claims
- 0689US5552345ADie separation method for silicon on diamond circuit structuresHARRIS CORP·Filed 1993·Granted Sep 3, 1996·104 cites·75 claims
- 0789US5362667ABonded wafer processingHARRIS CORP·Filed 1992·Granted Nov 8, 1994·93 cites·26 claims
- 0888US6246090B1Power trench transistor device source region formation using silicon spacerINTERSIL CORP·Filed 2000·Granted Jun 12, 2001·43 cites·13 claims
- 0986US5744852ABonded waferHARRIS CORP·Filed 1996·Granted Apr 28, 1998·68 cites·8 claims
- 1084US6255195B1Method for forming a bonded substrate containing a planar intrinsic gettering zone and substrate formed by said methodINTERSIL CORP·Filed 1999·Granted Jul 3, 2001·66 cites·23 claims
- 1183US5683939ADiamond insulator devices and method of fabricationHARRIS CORP·Filed 1995·Granted Nov 4, 1997·73 cites·19 claims
- 1280US5892223AMultilayer microtip probe and methodHARRIS CORP·Filed 1997·Granted Apr 6, 1999·64 cites·21 claims
- 1380US5728624ABonded wafer processingHARRIS CORP·Filed 1995·Granted Mar 17, 1998·52 cites·11 claims
- 1480US5517047ABonded wafer processingHARRIS CORP·Filed 1994·Granted May 14, 1996·53 cites·5 claims
- 1578US5650639AIntegrated circuit with diamond insulatorHARRIS CORP·Filed 1994·Granted Jul 22, 1997·50 cites·24 claims
- 1677US5547896ADirect etch for thin film resistor using a hard maskHARRIS CORP·Filed 1995·Granted Aug 20, 1996·53 cites·30 claims
- 1774US6455379B2Power trench transistor device source region formation using silicon spacerFAIRCHILD SEMICONDUCTOR·Filed 2001·Granted Sep 24, 2002·18 cites·12 claims
- 1874US5932022ASC-2 based pre-thermal treatment wafer cleaning processHARRIS CORP·Filed 1998·Granted Aug 3, 1999·51 cites·3 claims
- 1972US5603779ABonded wafer and method of fabrication thereofHARRIS CORP·Filed 1995·Granted Feb 18, 1997·35 cites·28 claims
- 2067US6825532B2Bonded substrate for an integrated circuit containing a planar intrinsic gettering zoneINTERSIL INC·Filed 2001·Granted Nov 30, 2004·12 cites·32 claims
- 2167US5841182ACapacitor structure in a bonded wafer and method of fabricationHARRIS CORP·Filed 1996·Granted Nov 24, 1998·34 cites·23 claims
- 2266US5782975AMethod for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereofFiled 1996·Granted Jul 21, 1998·27 cites·17 claims
- 2362US6909146B1Bonded wafer with metal silicidationINTERSIL CORP·Filed 1999·Granted Jun 21, 2005·25 cites·6 claims
- 2462US5833758AMethod for cleaning semiconductor wafers to improve dice to substrate solderabilityHARRIS CORP·Filed 1996·Granted Nov 10, 1998·19 cites·12 claims
- 2559US5451263APlasma cleaning method for improved ink brand permanency on IC packages with metallic partsHARRIS CORP·Filed 1994·Granted Sep 19, 1995·35 cites·10 claims
- 2655US7052973B2Bonded substrate for an integrated circuit containing a planar intrinsic gettering zoneINTERSIL INC·Filed 2004·Granted May 30, 2006·5 cites·18 claims
- 2749US6034411AInverted thin film resistorINTERSIL CORP·Filed 1997·Granted Mar 7, 2000·11 cites·8 claims
- 2849US5882423APlasma cleaning method for improved ink brand permanency on IC packagesHARRIS CORP·Filed 1996·Granted Mar 16, 1999·18 cites·18 claims
- 2945US5526768AMethod for providing a silicon and diamond substrate having a carbon to silicon transition layer and apparatus thereofHARRIS CORP·Filed 1994·Granted Jun 18, 1996·12 cites·12 claims
- 3042US2007187803A1Plasma Enhanced Deposited, Fully Oxidized PSG FilmINTERSIL INC·Filed 2007·Application pending·0 cites
- 3138US5395774AMethods for forming a transistor having an emitter with enhanced efficiencyHARRIS CORP·Filed 1993·Granted Mar 7, 1995·9 cites·25 claims
- 3236US6121105AInverted thin film resistor and method of manufactureINTERSIL CORP·Filed 1999·Granted Sep 19, 2000·4 cites·14 claims
- 3335US7223706B2Method for forming plasma enhanced deposited, fully oxidized PSG filmINTERSIL INC·Filed 2004·Granted May 29, 2007·0 cites·8 claims
- 3433US7174626B2Method of manufacturing a plated electronic terminationINTERSIL INC·Filed 1999·Granted Feb 13, 2007·4 cites·27 claims
- 3532US5837603APlanarization method by use of particle dispersion and subsequent thermal flowHARRIS CORP·Filed 1996·Granted Nov 17, 1998·3 cites·23 claims
- 3631US5279850AGas phase chemical reduction of metallic branding layer of electronic circuit package for deposition of branding inkHARRIS CORP·Filed 1992·Granted Jan 18, 1994·6 cites·20 claims
- 3730US5228330AHermetic IC package moisture testerHARRIS CORP·Filed 1992·Granted Jul 20, 1993·2 cites·12 claims
- 3822US2002189640A1Sc-2 based pre-thermal treatment wafer cleaning processFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →