Inventor · disambiguated record
Jae Kyoung Mun
Also filed as: MUN JAE KYOUNG
46 granted patents·12 pending applications·219 citations·filing 1996–2023
98Inventor score
Files withKOREA ELECTRONICS TELECOMM42ELECTRONICS & TELECOMMUNICATIONS RES INST6AHN HO KYUN1BAE SUNG BUM1CHANG WOO JIN1
Top patents by PatentIndex Score
58 records- 0189US7387955B2Field effect transistor and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Jun 17, 2008·13 cites·5 claims
- 0287US7419862B2Method of fabricating pseudomorphic high electron mobility transistorKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 2, 2008·16 cites·9 claims
- 0386US9136396B2Semiconductor device and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Sep 15, 2015·8 cites·14 claims
- 0486US8841969B2Automatic gain control feedback amplifierKOREA ELECTRONICS TELECOMM·Filed 2012·Granted Sep 23, 2014·8 cites·9 claims
- 0586US7902572B2Field effect transistor and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Mar 8, 2011·9 cites·4 claims
- 0685US9825622B2Cascode switch circuitELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2016·Granted Nov 21, 2017·5 cites·17 claims
- 0782US9178474B2Feedback amplifierKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Nov 3, 2015·6 cites·10 claims
- 0882US8723222B2Nitride electronic device and method for manufacturing the sameBAE SUNG BUM·Filed 2012·Granted May 13, 2014·5 cites·8 claims
- 0981US6593603B1Pseudomorphic high electron mobility transistor power deviceKOREA ELECTRONICS TELECOMM·Filed 2002·Granted Jul 15, 2003·31 cites·12 claims
- 1080US9337121B2Semiconductor device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2014·Granted May 10, 2016·4 cites·14 claims
- 1180US9136347B2Nitride semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Sep 15, 2015·5 cites·13 claims
- 1280US8722474B2Semiconductor device including stepped gate electrode and fabrication method thereofYOON HYUNG SUP·Filed 2012·Granted May 13, 2014·6 cites·7 claims
- 1379US8901608B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Dec 2, 2014·4 cites·20 claims
- 1479US8841154B2Method of manufacturing field effect type compound semiconductor deviceKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Sep 23, 2014·5 cites·8 claims
- 1577US10020201B2Semiconductor device and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2016·Granted Jul 10, 2018·2 cites·7 claims
- 1676US9634112B2Field effect transistor and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Apr 25, 2017·2 cites·11 claims
- 1775US7183149B2Method of manufacturing field effect transistorKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Feb 27, 2007·6 cites·12 claims
- 1874US7671697B2High-isolation switching device for millimeter-wave band control circuitKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Mar 2, 2010·5 cites·6 claims
- 1970US9159612B2Semiconductor device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Oct 13, 2015·2 cites·6 claims
- 2068US12480222B2Alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in HVPE growth manner and method for manufacturing the sameKOREA INST CERAMIC ENG & TECH·Filed 2023·Granted Nov 25, 2025·0 cites·13 claims
- 2167US8937002B2Nitride electronic device and method for manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Jan 20, 2015·1 cites·2 claims
- 2267US8853821B2Vertical capacitors and methods of forming the sameKIM SEONG-IL·Filed 2012·Granted Oct 7, 2014·2 cites·10 claims
- 2366US8952422B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Feb 10, 2015·1 cites·5 claims
- 2466US7889023B2Switching circuit for millimeter waveband control circuitELECTRONICS AND TELECOMMINUCATION RES INST·Filed 2008·Granted Feb 15, 2011·4 cites·10 claims
- 2563US7548143B2Microwave module having converter for improving transmission characteristicsKOREA ELECTRONICS TELECOMM·Filed 2007·Granted Jun 16, 2009·2 cites·9 claims
- 2662US8941231B2Electronic chip and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Jan 27, 2015·1 cites·18 claims
- 2762US7973368B2Semiconductor device with T-gate electrodeKOREA ELECTRONICS TELECOMM·Filed 2008·Granted Jul 5, 2011·2 cites·20 claims
- 2862US6979871B2Semiconductor device having T-shaped gate electrode and method of manufacturing the sameKOREA ELECTRONICS TELECOMM·Filed 2003·Granted Dec 27, 2005·9 cites·5 claims
- 2960US9159583B2Methods of manufacturing nitride semiconductor devicesKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Oct 13, 2015·1 cites·13 claims
- 3060US7429894B2Power device having connection structure compensating for reactance component of transmission lineKOREA ELECTRONICS TELECOMM·Filed 2006·Granted Sep 30, 2008·4 cites·4 claims
- 3158US5760418AGaAs power semiconductor device operating at a low voltage and method for fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 1997·Granted Jun 2, 1998·20 cites·8 claims
- 3257US9209266B2High electron mobility transistor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2014·Granted Dec 8, 2015·0 cites·9 claims
- 3357US6933543B2Compound semiconductor high frequency switch deviceKOREA ELECTRONICS TELECOMM·Filed 2004·Granted Aug 23, 2005·8 cites·13 claims
- 3456US7871874B2Transistor of semiconductor device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2009·Granted Jan 18, 2011·0 cites·8 claims
- 3555US2015129890A1TransistorKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 3653US7893462B2Transistor of semiconductor device and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Feb 22, 2011·1 cites·8 claims
- 3751US9490214B2Semiconductor device and method of fabricating the sameELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2015·Granted Nov 8, 2016·0 cites·11 claims
- 3851US6541319B2Method of manufacturing a self-aligned gate transistor with P-type impurities selectively implanted below the gate, source and drain electrodesELECT & TELECOMM RESEARCH INST·Filed 2001·Granted Apr 1, 2003·5 cites·4 claims
- 3950US2014363937A1Power semiconductor device and fabrication method thereofKOREA ELECTRONICS TELECOMM·Filed 2014·Application pending·0 cites
- 4050US2013187197A1High electron mobility transistor and manufacturing method thereofKOREA ELECTRONICS TELECOMM·Filed 2012·Application pending·0 cites
- 4149US7518166B2Transistor or semiconductor device comprising ohmic contact in an epitaxy substrateKOREA ELECTRONICS TELECOMM·Filed 2005·Granted Apr 14, 2009·0 cites·15 claims
- 4248US8759204B1Method for manufacturing semiconductor substrateKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Jun 24, 2014·0 cites·20 claims
- 4348US2016020147A1Impedance matching circuit, power amplifier and manufacturing method for variable capacitorKOREA ELECTRONICS TELECOMM·Filed 2015·Application pending·0 cites
- 4448US2013207730A1Impedance matching circuit, power amplifier and manufacturing method for variable capacitorKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 4548US2022223696A1Method for manufacturing power semiconductor deviceELECTRONICS & TELECOMMUNICATIONS RES INST·Filed 2022·Application pending·0 cites
- 4648US2014159050A1Field effect transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Application pending·0 cites
- 4747US8058658B2High-speed optical interconnection deviceLEE SANG-HEUNG·Filed 2009·Granted Nov 15, 2011·0 cites·10 claims
- 4845US9224830B2Transistor and method of fabricating the sameKOREA ELECTRONICS TELECOMM·Filed 2013·Granted Dec 29, 2015·0 cites·18 claims
- 4944US8772833B2Power semiconductor device and fabrication method thereofCHANG WOO JIN·Filed 2012·Granted Jul 8, 2014·0 cites·10 claims
- 5044US5989961AFabrication method of a vertical channel transistorKOREA ELECTRONICS TELECOMM·Filed 1998·Granted Nov 23, 1999·9 cites·6 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →