Inventor · disambiguated record
Jae-Hee Oh
Also filed as: OH JAE-HEE
32 granted patents·7 pending applications·899 citations·filing 2001–2022
97Inventor score
Top patents by PatentIndex Score
39 records- 0198US8030129B2Method of fabricating nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Oct 4, 2011·516 cites·18 claims
- 0296US7541252B2Methods of fabricating a semiconductor device including a self-aligned cell diodeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 2, 2009·101 cites·19 claims
- 0396US7442602B2Methods of fabricating phase change memory cells having a cell diode and a bottom electrode self-aligned with each otherSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 28, 2008·39 cites·14 claims
- 0495US7651906B2Integrated circuit devices having a stress buffer spacer and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 26, 2010·27 cites·43 claims
- 0593US7598112B2Phase change memory devices and their methods of fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 6, 2009·24 cites·12 claims
- 0692US8143610B2Semiconductor phase-change memory devicePARK JAE-HYUN·Filed 2009·Granted Mar 27, 2012·25 cites·11 claims
- 0789US9117595B2Electronic component with terminal stripsTAIYO YUDEN KK·Filed 2013·Granted Aug 25, 2015·9 cites·7 claims
- 0888US7671395B2Phase change memory cells having a cell diode and a bottom electrode self-aligned with each otherSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 2, 2010·14 cites·35 claims
- 0987US7612360B2Non-volatile memory devices having cell diodesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 3, 2009·16 cites·18 claims
- 1087US7534723B2Methods of forming fine patterns, and methods of forming trench isolation layers using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 19, 2009·12 cites·11 claims
- 1184US7906773B2Phase change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 15, 2011·13 cites·17 claims
- 1281US8384060B2Resistive memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 26, 2013·7 cites·16 claims
- 1378US8021966B2Method fabricating nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 20, 2011·11 cites·9 claims
- 1476US7625777B2Memory device having highly integrated cell structure and method of its fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 1, 2009·4 cites·12 claims
- 1575US8119503B2Methods of forming integrated circuit devices having vertical semiconductor interconnects and diodes therein and devices formed therebyLEE KONG-SOO·Filed 2009·Granted Feb 21, 2012·8 cites·19 claims
- 1675US7375389B2Semiconductor device having a capacitor-under-bitline structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 20, 2008·20 cites·10 claims
- 1773US8148193B2Semiconductor device and method of fabricating the samePARK JAE-HYUN·Filed 2011·Granted Apr 3, 2012·4 cites·12 claims
- 1872US8120005B2Phase change memory devices and their methods of fabricationPARK JAE-HYUN·Filed 2009·Granted Feb 21, 2012·3 cites·20 claims
- 1971US8039828B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 18, 2011·6 cites·9 claims
- 2071US7622307B2Semiconductor devices having a planarized insulating layer and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 24, 2009·4 cites·23 claims
- 2166US8518790B2Method of forming memory deviceKIM JUNG-IN·Filed 2012·Granted Aug 27, 2013·2 cites·6 claims
- 2262US6486531B2Contact structure with a lower interconnection having t-shaped portion in cross section and method for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 26, 2002·11 cites·18 claims
- 2360US7910912B2Semiconductor devices having a planarized insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Mar 22, 2011·1 cites·12 claims
- 2459US8324067B2Method of forming memory deviceKIM JUNG-IN·Filed 2010·Granted Dec 4, 2012·1 cites·7 claims
- 2558US6620685B2Method for fabricating of semiconductor memory device having a metal plug or a landing padSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Sep 16, 2003·7 cites·14 claims
- 2656US7163859B2Method of manufacturing capacitors for semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jan 16, 2007·6 cites·23 claims
- 2756US6777735B2Semiconductor memory device having a metal plug or a landing padSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 17, 2004·6 cites·9 claims
- 2854US2010038624A1Memory device having highly integrated cell structure and method of its fabricationSAMSUNG ELECTRONICS CO LTD·Filed 2009·Application pending·0 cites
- 2951US8791448B2Semiconductor memory devices having strapping contactsKIM JUNG-IN·Filed 2012·Granted Jul 29, 2014·1 cites·12 claims
- 3051US8493769B2Memory devices including decoders having different transistor channel dimensions and related devicesEUN SUNG-HO·Filed 2010·Granted Jul 23, 2013·1 cites·27 claims
- 3148US2023170289A1Interposer structure and semiconductor package including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3246US2007069271A1Methods for manufacturing capacitors for semiconductor devicesKIM DONG-WOO·Filed 2006·Application pending·0 cites
- 3340US8724411B2Memory devices and memory systems including discharge linesKIM JIN-YOUNG·Filed 2011·Granted May 13, 2014·0 cites·14 claims
- 3438US2008239783A1Semiconductor memory devices having strapping contactsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3536US8958229B2Nonvolatile memory device and method of fabricating samePARK JAE-HYUN·Filed 2011·Granted Feb 17, 2015·0 cites·18 claims
- 3635US2008280390A1Method of fabricating semiconductor memory device having self-aligned electrode, related device and electronic system having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3733US2011188292A1Variable resistance memory, operating method and systemSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
- 3832US7018903B2Method of forming semiconductor device with capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 28, 2006·0 cites·10 claims
- 3932US2013009125A1Low resistance semiconductor devicePARK JONG-HYUN·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →