Inventor · disambiguated record
Jaejoon Oh
Also filed as: OH JAEJOON
19 granted patents·19 pending applications·19 citations·filing 2018–2025
89Inventor score
Files withSAMSUNG ELECTRONICS CO LTD38
Top patents by PatentIndex Score
38 records- 0196US11581269B2Semiconductor thin film structures and electronic devices including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·10 cites·26 claims
- 0294US11757029B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·12 claims
- 0391US12218233B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 4, 2025·1 cites·20 claims
- 0490US12288738B2Semiconductor device package and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 29, 2025·2 cites·27 claims
- 0588US12002879B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 4, 2024·2 cites·24 claims
- 0682US11784367B2Metal-air battery apparatus and method of controlling temperature thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·9 claims
- 0780US11069802B2Field effect transistor including gradually varying composition channelSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·2 cites·37 claims
- 0879US2025056827A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0974US12489038B2Semiconductor device packageSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 2, 2025·0 cites·13 claims
- 1074US11522240B2Metal-air battery apparatus and method of controlling temperature thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 6, 2022·0 cites·5 claims
- 1172US12464793B2Nitride semiconductor buffer structure and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 1270US2025212446A1High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1366US11888059B2Field effect transistor including gradually varying composition channelSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·36 claims
- 1463US12278281B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 1563US11335802B2High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 17, 2022·0 cites·25 claims
- 1662US2021305418A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Application pending·0 cites
- 1761US2025169123A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1861US2025212445A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1960US2025176247A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2059US2025169098A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2159US2022148947A1Semiconductor device packageSAMSUNG ELECTRONICS CO LTD·Filed 2021·Application pending·0 cites
- 2258US12119397B2Semiconductor IC device including passivation layer for inactivating a dopant in a p-type semiconductor layer and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·13 claims
- 2358US12113110B2Nitride semiconductor device with field effect gateSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
- 2458US2025169096A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2558US2024274689A1High electron mobility transistor and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 2656US2024213327A1Superlattice buffer structure and semiconductor device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2756US2024258398A1High electron mobility transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2856US2024204092A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2955US2024096944A1Power device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3055US2024243177A1Semiconductor device and method of manufacturing the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3153US2024113184A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 3252US11728419B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 15, 2023·0 cites·20 claims
- 3352US2025359268A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3451US2025359267A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3550US11588046B2High electron mobility transistorSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 3649US12317536B2Semiconductor device and power switching system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 27, 2025·0 cites·19 claims
- 3747US11837642B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 5, 2023·0 cites·35 claims
- 3844US2018351224A1Metal-air battery apparatus and operation method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →