Inventor · disambiguated record
Jacob Riseman
Also filed as: RISEMAN JACOB
34 granted patents·2,949 citations·filing 1973–1986
98Inventor score
Files withIBM34
Top patents by PatentIndex Score
34 records- 0199US4234362AMethod for forming an insulator between layers of conductive materialIBM·Filed 1978·Granted Nov 18, 1980·288 cites·23 claims
- 0298US4419809AFabrication process of sub-micrometer channel length MOSFETsIBM·Filed 1981·Granted Dec 13, 1983·332 cites·26 claims
- 0397US4944836AChem-mech polishing method for producing coplanar metal/insulator films on a substrateIBM·Filed 1985·Granted Jul 31, 1990·539 cites·11 claims
- 0497US4648937AMethod of preventing asymmetric etching of lines in sub-micrometer range sidewall images transferIBM·Filed 1985·Granted Mar 10, 1987·348 cites·18 claims
- 0595US4671851AMethod for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing techniqueIBM·Filed 1985·Granted Jun 9, 1987·189 cites·15 claims
- 0695US4521952AMethod of making integrated circuits using metal silicide contactsIBM·Filed 1982·Granted Jun 11, 1985·81 cites·15 claims
- 0795US4209349AMethod for forming a narrow dimensioned mask opening on a silicon body utilizing reactive ion etchingIBM·Filed 1978·Granted Jun 24, 1980·95 cites·20 claims
- 0894US4356211AForming air-dielectric isolation regions in a monocrystalline silicon substrate by differential oxidation of polysiliconIBM·Filed 1980·Granted Oct 26, 1982·102 cites·13 claims
- 0993US4169000AMethod of forming an integrated circuit structure with fully-enclosed air isolationIBM·Filed 1978·Granted Sep 25, 1979·79 cites·7 claims
- 1093US4090254ACharge injector transistor memoryIBM·Filed 1976·Granted May 16, 1978·57 cites·22 claims
- 1191US4419810ASelf-aligned field effect transistor processIBM·Filed 1981·Granted Dec 13, 1983·89 cites·20 claims
- 1291US4252579AMethod for making single electrode U-MOSFET random access memory utilizing reactive ion etching and polycrystalline depositionIBM·Filed 1979·Granted Feb 24, 1981·72 cites·12 claims
- 1391US4209350AMethod for forming diffusions having narrow dimensions utilizing reactive ion etchingIBM·Filed 1978·Granted Jun 24, 1980·65 cites·18 claims
- 1485US4462040ASingle electrode U-MOSFET random access memoryIBM·Filed 1980·Granted Jul 24, 1984·60 cites·4 claims
- 1585US3943542AHigh reliability, low leakage, self-aligned silicon gate FET and method of fabricating sameIBM·Filed 1974·Granted Mar 9, 1976·30 cites·7 claims
- 1682US4032058ABeam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leadsIBM·Filed 1976·Granted Jun 28, 1977·44 cites·8 claims
- 1779US4506435AMethod for forming recessed isolated regionsIBM·Filed 1981·Granted Mar 26, 1985·45 cites·28 claims
- 1878US4546536AFabrication methods for high performance lateral bipolar transistorsIBM·Filed 1983·Granted Oct 15, 1985·42 cites·15 claims
- 1977US4729006ASidewall spacers for CMOS circuit stress relief/isolation and method for makingIBM·Filed 1986·Granted Mar 1, 1988·51 cites·15 claims
- 2076US4689113AProcess for forming planar chip-level wiringIBM·Filed 1986·Granted Aug 25, 1987·49 cites·21 claims
- 2175US4641170ASelf-aligned lateral bipolar transistorsIBM·Filed 1985·Granted Feb 3, 1987·32 cites·8 claims
- 2273US3997963ANovel beam-lead integrated circuit structure and method for making the same including automatic registration of beam-leads with corresponding dielectric substrate leadsIBM·Filed 1975·Granted Dec 21, 1976·31 cites·5 claims
- 2371US4583106AFabrication methods for high performance lateral bipolar transistorsIBM·Filed 1985·Granted Apr 15, 1986·39 cites·14 claims
- 2469US4551906AMethod for making self-aligned lateral bipolar transistorsIBM·Filed 1983·Granted Nov 12, 1985·21 cites·10 claims
- 2569US4544576ADeep dielectric isolation by fused glassIBM·Filed 1981·Granted Oct 1, 1985·24 cites·14 claims
- 2666US4492717AMethod for forming a planarized integrated circuitIBM·Filed 1981·Granted Jan 8, 1985·28 cites·19 claims
- 2764US4507171AMethod for contacting a narrow width PN junction regionIBM·Filed 1982·Granted Mar 26, 1985·29 cites·15 claims
- 2859US4070687AComposite channel field effect transistor and method of fabricationIBM·Filed 1977·Granted Jan 24, 1978·17 cites·4 claims
- 2951US4712125AStructure for contacting a narrow width PN junction regionIBM·Filed 1984·Granted Dec 8, 1987·18 cites·24 claims
- 3050US4106050AIntegrated circuit structure with fully enclosed air isolationIBM·Filed 1976·Granted Aug 8, 1978·12 cites·5 claims
- 3150US4017883ASingle-electrode charge-coupled random access memory cell with impurity implanted gate regionIBM·Filed 1973·Granted Apr 12, 1977·10 cites·5 claims
- 3249US3972754AMethod for forming dielectric isolation in integrated circuitsIBM·Filed 1975·Granted Aug 3, 1976·12 cites·6 claims
- 3344US4464212AMethod for making high sheet resistivity resistorsIBM·Filed 1982·Granted Aug 7, 1984·11 cites·2 claims
- 3441US4054989AHigh reliability, low leakage, self-aligned silicon gate FET and method of fabricating sameIBM·Filed 1975·Granted Oct 25, 1977·8 cites·4 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →