Inventor · disambiguated record
Jaume Roig-Guitart
Also filed as: ROIG-GUITART JAUME
24 granted patents·8 pending applications·35 citations·filing 2008–2024
93Inventor score
Top patents by PatentIndex Score
32 records- 0189US11108390B2Method of forming a semiconductor device and circuit thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Aug 31, 2021·4 cites·20 claims
- 0286US10937781B1Electronic device including a protection circuitSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Mar 2, 2021·6 cites·20 claims
- 0382US10504884B2Electronic device and circuit including a transistor and a variable resistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Dec 10, 2019·2 cites·18 claims
- 0481US10545055B2Electronic device including a temperature sensorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jan 28, 2020·2 cites·20 claims
- 0581US9219138B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 0679US11444090B2Semiconductor device having a programming elementSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Sep 13, 2022·1 cites·20 claims
- 0778US9287371B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND·Filed 2013·Granted Mar 15, 2016·5 cites·16 claims
- 0873US10770455B2Electronic device including a transistor and a variable capacitorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Sep 8, 2020·2 cites·19 claims
- 0973US10218350B2Circuit with transistors having coupled gatesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Feb 26, 2019·2 cites·20 claims
- 1070US9269789B2Method of forming a high electron mobility semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2014·Granted Feb 23, 2016·2 cites·20 claims
- 1168US10418439B2Method of forming a semiconductor device termination and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Sep 17, 2019·1 cites·12 claims
- 1260US9991776B2Switched mode power supply converterSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Jun 5, 2018·1 cites·20 claims
- 1360US8298889B2Process of forming an electronic device including a trench and a conductive structure thereinROIG-GUITART JAUME·Filed 2008·Granted Oct 30, 2012·1 cites·15 claims
- 1458US2025323639A1Asymmetric common source inductances to reduce turn-off overvoltage in mosfetsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1557US2019363158A1Method of forming a semiconductor device termination and structure thereforSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Application pending·0 cites
- 1655US2025338632A1Switching device with passive overcurrent protectionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1755US2023403003A1Integrated resistor-transistor-capacitor snubberSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 1854US2025324769A1Electronic device and a circuit including a power transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 1953US9413348B2Electronic circuit including a switch having an associated breakdown voltage and a method of using the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Aug 9, 2016·1 cites·20 claims
- 2052US11600611B2Electronic device including high electron mobility transistors and a resistor and a method of using the sameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Mar 7, 2023·0 cites·20 claims
- 2150US12068408B2High electron mobility transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2021·Granted Aug 20, 2024·0 cites·19 claims
- 2249US11018129B2Circuit that changes voltage of back electrode of transistor based on error conditionSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted May 25, 2021·0 cites·20 claims
- 2348US8648398B2Electronic device and a transistor including a trench and a sidewall doped regionROIG-GUITART JAUME·Filed 2012·Granted Feb 11, 2014·0 cites·20 claims
- 2447US11817478B2Termination structures with reduced dynamic output capacitance lossSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Nov 14, 2023·0 cites·20 claims
- 2545US9929261B2Electronic device including a HEMT with a segmented gate electrodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Mar 27, 2018·0 cites·16 claims
- 2644US8299528B2Transistor and method thereofROIG-GUITART JAUME·Filed 2009·Granted Oct 30, 2012·0 cites·17 claims
- 2743US10090380B2Semiconductor device having localized charge balance structure and methodSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Oct 2, 2018·0 cites·20 claims
- 2841US11152497B2Variable resistance to reduce gate votlage oscillations in gallium nitride transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 19, 2021·0 cites·15 claims
- 2941US2020251588A1Super-junction mosfet with integrated snubber circuitSEMICONDUCTOR COMPONENTS IND·Filed 2019·Application pending·0 cites
- 3040US2021225836A1Electronic Device Including a High Electron Mobility Transistor and a DiodeSEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Application pending·0 cites
- 3139US10147785B2High-voltage superjunction field effect transistorSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Dec 4, 2018·0 cites·20 claims
- 3235US2012187526A1Method of forming a semiconductor device termination and structure thereforROIG-GUITART JAUME·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →