Inventor · disambiguated record
James R. Shealy
Also filed as: SHEALY JAMES · SHEALY JAMES R · SHEALY JAMES RICHARD
24 granted patents·1 pending application·554 citations·filing 1979–2024
95Inventor score
Files withGEN ELECTRIC6ODYSSEY SEMICONDUCTOR INC5CORNELL RES FOUNDATION INC4POWER INTEGRATIONS INC4SHEALY JAMES R4
Top patents by PatentIndex Score
25 records- 0197US7250360B2Single step, high temperature nucleation process for a lattice mismatched substrateCORNELL RES FOUNDATION INC·Filed 2005·Granted Jul 31, 2007·104 cites·24 claims
- 0295US8791034B2Chemical vapor deposition process for aluminum silicon nitrideSHEALY JAMES R·Filed 2010·Granted Jul 29, 2014·32 cites·28 claims
- 0395US4262296AVertical field effect transistor with improved gate and channel structureGEN ELECTRIC·Filed 1979·Granted Apr 14, 1981·76 cites·14 claims
- 0494US11469348B1Beryllium doped GaN-based light emitting diode and methodODYSSEY SEMICONDUCTOR INC·Filed 2020·Granted Oct 11, 2022·3 cites·32 claims
- 0594US6150680AField effect semiconductor device having dipole barrierWELCH ALLYN INC·Filed 1998·Granted Nov 21, 2000·142 cites·39 claims
- 0692US4343015AVertical channel field effect transistorGEN ELECTRIC·Filed 1980·Granted Aug 3, 1982·71 cites·12 claims
- 0788US11251295B1Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2020·Granted Feb 15, 2022·2 cites·10 claims
- 0888US6478871B1Single step process for epitaxial lateral overgrowth of nitride based materialsCORNELL RES FOUNDATION INC·Filed 2000·Granted Nov 12, 2002·43 cites·20 claims
- 0980US12062738B2Beryllium doped GaN-based light emitting diode and methodPOWER INTEGRATIONS INC·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 1080US12046699B2Beryllium doped GaN-based light emitting diode and methodPOWER INTEGRATIONS INC·Filed 2022·Granted Jul 23, 2024·0 cites·18 claims
- 1180US9299821B2Gated III-V semiconductor structure and methodSHEALY JAMES R·Filed 2011·Granted Mar 29, 2016·5 cites·24 claims
- 1280US2024213363A1Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 1379US11942537B2Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2023·Granted Mar 26, 2024·0 cites·20 claims
- 1479US5003548AHigh power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laserCORNELL RES FOUNDATION INC·Filed 1988·Granted Mar 26, 1991·25 cites·18 claims
- 1579US4564509AMethod and apparatus for improved gettering for reactant gasesNORTHEAST SEMICONDUCTOR INC·Filed 1983·Granted Jan 14, 1986·29 cites·17 claims
- 1677US9306050B2III-V semiconductor structures including aluminum-silicon nitride passivationSHEALY JAMES R·Filed 2010·Granted Apr 5, 2016·4 cites·22 claims
- 1774US11652165B2Vertical field effect transistor device and method of fabricationODYSSEY SEMICONDUCTOR INC·Filed 2022·Granted May 16, 2023·0 cites·10 claims
- 1872US9991360B2Method for forming III-V semiconductor structures including aluminum-silicon nitride passivationSHEALY JAMES R·Filed 2010·Granted Jun 5, 2018·3 cites·11 claims
- 1970US12512312B1Vertical gallium nitride containing field effect transistor with silicon nitride passivation and gate dielectric regionsPOWER INTEGRATIONS INC·Filed 2022·Granted Dec 30, 2025·0 cites·21 claims
- 2059US11719191B2Skirted leaf seal apparatusGEN ELECTRIC·Filed 2021·Granted Aug 8, 2023·0 cites·20 claims
- 2157US11674447B2Skirted seal apparatusGEN ELECTRIC·Filed 2021·Granted Jun 13, 2023·0 cites·19 claims
- 2255US12068161B1Method for implant and anneal for high voltage field effect transistorsPOWER INTEGRATIONS INC·Filed 2022·Granted Aug 20, 2024·0 cites·9 claims
- 2353US11692510B2Plunger seal assembly and sealing methodGEN ELECTRIC·Filed 2021·Granted Jul 4, 2023·0 cites·18 claims
- 2452US5834379AProcess for synthesis of cubic GaN on GaAs using NH3 in an RF plasma processCORNELL RES FOUNDATION INC·Filed 1996·Granted Nov 10, 1998·15 cites·6 claims
- 2551US11703014B2Flexurally actuated self-sealing plunger apparatusGEN ELECTRIC·Filed 2021·Granted Jul 18, 2023·0 cites·22 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →