Inventor · disambiguated record
Jae-Joo Shim
Also filed as: SHIM JAE-JOO
24 granted patents·5 pending applications·227 citations·filing 2005–2025
96Inventor score
Top patents by PatentIndex Score
29 records- 0196US8284601B2Semiconductor memory device comprising three-dimensional memory cell arraySON BYOUNGKEUN·Filed 2010·Granted Oct 9, 2012·40 cites·45 claims
- 0295US8809938B2Three dimensional semiconductor memory devicesHWANG SUNG-MIN·Filed 2011·Granted Aug 19, 2014·24 cites·20 claims
- 0393US8921918B2Three-dimensional semiconductor devicesSHIM JAE-JOO·Filed 2011·Granted Dec 30, 2014·22 cites·20 claims
- 0493US8787082B2Semiconductor memory device comprising three-dimensional memory cell arraySON BYOUNGKEUN·Filed 2012·Granted Jul 22, 2014·19 cites·9 claims
- 0593US8519472B2Semiconductor device and method of forming the sameJEONG JAEHUN·Filed 2010·Granted Aug 27, 2013·22 cites·20 claims
- 0692US8592912B2Semiconductor device and method of fabricating the sameHWANG SUNG-MIN·Filed 2011·Granted Nov 26, 2013·15 cites·11 claims
- 0791US7825472B2Semiconductor device having a plurality of stacked transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 2, 2010·21 cites·9 claims
- 0889US9111799B2Semiconductor device with a pick-up regionHWANG SUNG-MIN·Filed 2011·Granted Aug 18, 2015·11 cites·20 claims
- 0988US8563378B2Manufacturing semiconductor devicesSHIM JAE-JOO·Filed 2011·Granted Oct 22, 2013·9 cites·13 claims
- 1087US8742466B2Three-dimensional semiconductor device including a mold structure providing gap regions and an interconnection structure including a plurality of interconnection patterns formed in the gap regionsSHIM JAE-JOO·Filed 2010·Granted Jun 3, 2014·8 cites·19 claims
- 1183US11495615B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 8, 2022·3 cites·20 claims
- 1281US7276421B2Method of forming single crystal semiconductor thin film on insulator and semiconductor device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 2, 2007·9 cites·7 claims
- 1375US10825830B2Vertical semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 3, 2020·2 cites·20 claims
- 1473US9196525B2Three-dimensional semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 24, 2015·2 cites·13 claims
- 1573US8836020B2Vertical nonvolatile memory devices having reference featuresLIM JU-YOUNG·Filed 2011·Granted Sep 16, 2014·6 cites·15 claims
- 1670US10008389B2Methods of manufacturing vertical memory devices at an edge regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 26, 2018·2 cites·19 claims
- 1768US2025275131A1Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1866US9418911B2Three-dimensional semiconductor memory device having sidewall and interlayer moldsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 16, 2016·1 cites·20 claims
- 1966US9209244B2Semiconductor device with vertical structures that penetrate conductive patterns and interlayer insulating patternsSHIM JAE-JOO·Filed 2012·Granted Dec 8, 2015·2 cites·20 claims
- 2065US10790294B2Vertical memory deviceSHIM JAE JOO·Filed 2017·Granted Sep 29, 2020·1 cites·20 claims
- 2162US12501612B2Semiconductor device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 16, 2025·0 cites·20 claims
- 2260US7927932B2Semiconductor device having a plurality of stacked transistors and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Apr 19, 2011·1 cites·12 claims
- 2356US7135746B2SRAM cells having landing pad in contact with upper and lower cell gate patterns and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 14, 2006·4 cites·12 claims
- 2456US2024090211A1Three-dimensional semiconductor memory device and electronic system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2552US7276404B2Methods of forming SRAM cells having landing pad in contact with upper and lower cell gate patternsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 2, 2007·3 cites·12 claims
- 2649US2014048873A1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2741US10784281B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 22, 2020·0 cites·20 claims
- 2840US2013109148A1Methods of forming a pattern and methods of manufacturing semiconductor devices using the sameOH GYU-HWAN·Filed 2012·Application pending·0 cites
- 2933US2012108048A1Three-dimensional semiconductor devices and methods of fabricating the sameLIM JONG HEUN·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →