Inventor · disambiguated record
Jan A. Smudski
Also filed as: SMUDSKI JAN · SMUDSKI JAN A
3 granted patents·1 pending application·86 citations·filing 1993–2006
76Inventor score
Top patents by PatentIndex Score
4 records- 0175US6127696AHigh voltage MOS transistor for flash EEPROM applications having a uni-sided lightly doped drainINTEL CORP·Filed 1993·Granted Oct 3, 2000·35 cites·19 claims
- 0269US5668034AProcess for fabricating a high voltage MOS transistor for flash EEPROM applications having a uni-sided lightly doped drainINTEL CORP·Filed 1996·Granted Sep 16, 1997·36 cites·14 claims
- 0355US5580807AMethod of fabricating a high voltage MOS transistor for flash EEPROM applications having a uni-sided lightly doped grainINTEL CORP·Filed 1993·Granted Dec 3, 1996·15 cites·7 claims
- 0433US2008002317A1Method for protecting circuits from damage due to currents and voltages induced during manufactureLIN WALLACE·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →