Inventor · disambiguated record
Jae-Yeol Song
Also filed as: SONG JAE-YEOL
14 granted patents·4 pending applications·59 citations·filing 2012–2023
90Inventor score
Top patents by PatentIndex Score
18 records- 0193US9806075B2Integrated circuit devices having a Fin-type active region and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 31, 2017·9 cites·20 claims
- 0293US9780183B2Semiconductor devices having work function metal films and tuning materialsKIM WAN-DON·Filed 2016·Granted Oct 3, 2017·12 cites·20 claims
- 0390US10559687B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 11, 2020·7 cites·20 claims
- 0490US10312340B2Semiconductor devices having work function metal films and tuning materialsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 4, 2019·6 cites·20 claims
- 0585US9240483B2Fin-type field effect transistors including aluminum doped metal-containing layerSAMSUNG ELECTRONICS CO LTD·Filed 2012·Granted Jan 19, 2016·10 cites·20 claims
- 0683US10593670B2Methods of manufacturing integrated circuit devices having a fin-type active regionSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 17, 2020·3 cites·20 claims
- 0781US9793368B2Semiconductor devices including a rare earth element and methods of forming semiconductor devices including a rare earth elementSON HYEOK-JUN·Filed 2016·Granted Oct 17, 2017·5 cites·18 claims
- 0880US10529817B2Semiconductor devices having multi-threshold voltageSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 7, 2020·3 cites·20 claims
- 0973US10115797B2Finfet semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 30, 2018·2 cites·16 claims
- 1069US11495597B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 1162US10872888B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 22, 2020·0 cites·17 claims
- 1259US9048307B2Method of manufacturing a semiconductor device having sequentially stacked high-k dielectric layersSONG JAE-YEOL·Filed 2012·Granted Jun 2, 2015·2 cites·15 claims
- 1355US10361194B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 23, 2019·0 cites·19 claims
- 1453US11127739B2Methods of fabricating semiconductor devices using MOS transistors with nonuniform gate electrode structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 21, 2021·0 cites·10 claims
- 1553US2023387118A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1645US2014374840A1Semiconductor devices using mos transistors with nonuniform gate electrode structures and methods of fabricating the sameLEE HYE-LAN·Filed 2014·Application pending·0 cites
- 1742US2014203335A1Semiconductor Devices and Methods for Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Application pending·0 cites
- 1834US2016351569A1Semiconductor device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →