Inventor · disambiguated record
Jan Sonsky
Also filed as: SONSKY JAN
34 granted patents·10 pending applications·235 citations·filing 2005–2017
96Inventor score
Top patents by PatentIndex Score
44 records- 0195US7714292B2Geiger mode avalanche photodiodeKONINKL PHILIPS ELECTRONICS NV·Filed 2007·Granted May 11, 2010·90 cites·34 claims
- 0290US7906388B2Semiconductor device and method for manufactureNXP BV·Filed 2006·Granted Mar 15, 2011·20 cites·8 claims
- 0389US9472549B2Cascoded semiconductor devicesNXP BV·Filed 2013·Granted Oct 18, 2016·11 cites·13 claims
- 0489US7919364B2Semiconductor devices and methods of manufacture thereofNXP BV·Filed 2007·Granted Apr 5, 2011·16 cites·10 claims
- 0583US7671390B2Semiconductor device and method for manufactureNXP BV·Filed 2005·Granted Mar 2, 2010·11 cites·15 claims
- 0682US9391187B2Semiconductor heterojunction deviceNXP BV·Filed 2015·Granted Jul 12, 2016·4 cites·17 claims
- 0782US7808050B2Semiconductor device with relatively high breakdown voltage and manufacturing methodNXP BV·Filed 2006·Granted Oct 5, 2010·10 cites·18 claims
- 0881US8853816B2Integrated circuits separated by through-wafer trench isolationNXP BV·Filed 2012·Granted Oct 7, 2014·5 cites·5 claims
- 0979US8247280B2Integration of low and high voltage CMOS devicesSONSKY JAN·Filed 2009·Granted Aug 21, 2012·7 cites·14 claims
- 1078US10050034B2Semiconductor device and associated methodsNexperia BV·Filed 2016·Granted Aug 14, 2018·3 cites·14 claims
- 1178US9224634B2Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the methodSONSKY JAN·Filed 2006·Granted Dec 29, 2015·7 cites·19 claims
- 1277US9171837B2Cascode circuitNXP BV·Filed 2013·Granted Oct 27, 2015·4 cites·17 claims
- 1376US9793348B2Method of manufacturing a semiconductor device with an isolation region and a device manufactured by the methodNXP BV·Filed 2015·Granted Oct 17, 2017·2 cites·10 claims
- 1475US9917187B2Semiconductor device and manufacturing methodNexperia BV·Filed 2015·Granted Mar 13, 2018·2 cites·12 claims
- 1575US7897478B2Semiconductor device with field plate and methodNXP BV·Filed 2006·Granted Mar 1, 2011·6 cites·32 claims
- 1675US7825011B2Method of manufacturing a semiconductor device and semiconductor device obtained by means of said methodNXP BV·Filed 2006·Granted Nov 2, 2010·7 cites·16 claims
- 1772US10388778B2Low resistance and leakage deviceNexperia BV·Filed 2016·Granted Aug 20, 2019·2 cites·15 claims
- 1872US8962461B2GaN HEMTs and GaN diodesNXP BV·Filed 2013·Granted Feb 24, 2015·3 cites·15 claims
- 1972US8389392B2FinFET with separate gates and method for fabricating a finFET with separate gatesSONSKY JAN·Filed 2009·Granted Mar 5, 2013·5 cites·9 claims
- 2070US9177852B2Integrated circuits separated by through-wafer trench isolationNXP BV·Filed 2014·Granted Nov 3, 2015·2 cites·15 claims
- 2170US8373227B2Semiconductor device and method having trenches in a drain extension regionNXP BV·Filed 2009·Granted Feb 12, 2013·4 cites·11 claims
- 2269US8541267B2FinFET transistor with high-voltage capability and CMOS-compatible method for fabricating the sameSONSKY JAN·Filed 2009·Granted Sep 24, 2013·4 cites·19 claims
- 2367US10134860B2Semiconductor device having a dielectric layer with different thicknesses and method for formingNXP BV·Filed 2017·Granted Nov 20, 2018·1 cites·18 claims
- 2466US9929263B2Semiconductor device and method of making a semiconductor deviceNexperia BV·Filed 2016·Granted Mar 27, 2018·1 cites·13 claims
- 2566US9799757B2PN junction chemical sensorGRIDELET EVELYNE·Filed 2009·Granted Oct 24, 2017·4 cites·22 claims
- 2665US7923345B2Methods relating to trench-based support structures for semiconductor devicesNXP BV·Filed 2006·Granted Apr 12, 2011·3 cites·11 claims
- 2758US7956399B2Semiconductor device with low buried resistance and method of manufacturing such a deviceNXP BV·Filed 2006·Granted Jun 7, 2011·1 cites·18 claims
- 2851US9064847B2Heterojunction semiconductor device with conductive barrier portion and manufacturing methodNXP BV·Filed 2013·Granted Jun 23, 2015·0 cites·9 claims
- 2949US8390077B2Integration of low and high voltage CMOS devicesSONSKY JAN·Filed 2012·Granted Mar 5, 2013·0 cites·20 claims
- 3049US2011101452A1Trench gate semiconductor device and method of manufacturing thereofNXP BV·Filed 2009·Application pending·0 cites
- 3149US2011084356A1Local buried layer forming method and semiconductor device having such a layerNXP BV·Filed 2009·Application pending·0 cites
- 3247US9608514B2Diode circuit and power factor correction boost converter using the sameNXP BV·Filed 2015·Granted Mar 28, 2017·0 cites·16 claims
- 3346US9349819B2Heterojunction semiconductor device and manufacturing methodNXP BV·Filed 2015·Granted May 24, 2016·0 cites·5 claims
- 3443US10403747B2Gallium nitride/ aluminum gallium nitride semiconductor device and method of making a gallium nitride/ aluminum gallium nitride semiconductor deviceNexperia BV·Filed 2016·Granted Sep 3, 2019·0 cites·13 claims
- 3543US2010213517A1High voltage semiconductor deviceNXP BV·Filed 2008·Application pending·0 cites
- 3643US2010044760A1Self-aligned impact-ionization field effect transistorNXP BV·Filed 2007·Application pending·0 cites
- 3742US2008261358A1Manufacture of Lateral Semiconductor DevicesNXP BV·Filed 2006·Application pending·0 cites
- 3841US2009302375A1Method of manufacturing a semiconductor device and device manufactured by the methodNXP BV·Filed 2007·Application pending·0 cites
- 3941US2009278186A1Double Gate Transistor and Method of Manufacturing SameNXP BV·Filed 2007·Application pending·0 cites
- 4041US2011079848A1Semiconductor device with dummy gate electrode and corresponding integrated circuit and manufacturing methodNXP BV·Filed 2009·Application pending·0 cites
- 4140US10157809B2Semiconductor device and method of making a semiconductor device with passivation layers providing tuned resistanceNexperia BV·Filed 2016·Granted Dec 18, 2018·0 cites·14 claims
- 4240US2010244125A1Power semiconductor device structure for integrated circuit and method of fabrication thereofNXP BV·Filed 2007·Application pending·0 cites
- 4338US2010014631A1Scintillator based x-ray sensitive integrated circuit element with depleted electron drift regionKONINKL PHILIPS ELECTRONICS NV·Filed 2007·Application pending·0 cites
- 4434US9941265B2Circuitry with voltage limiting and capactive enhancementNexperia BV·Filed 2016·Granted Apr 10, 2018·0 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →