Inventor · disambiguated record
Janis Virbulis
Also filed as: VIRBULIS JANIS
7 granted patents·3 pending applications·33 citations·filing 1998–2022
81Inventor score
Top patents by PatentIndex Score
10 records- 0167US7335256B2Silicon single crystal, and process for producing itSILTRONIC AG·Filed 2006·Granted Feb 26, 2008·8 cites·20 claims
- 0262US6840998B2Silicon single crystal produced by crucible-free float zone pullingSILTRONIC AG·Filed 2002·Granted Jan 11, 2005·10 cites·18 claims
- 0357US7708830B2Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributionsSILTRONIC AG·Filed 2006·Granted May 4, 2010·0 cites·18 claims
- 0455US2024401233A1Process for producing a single crystal from siliconSILTRONIC AG·Filed 2022·Application pending·0 cites
- 0549US7025827B2Doped semiconductor wafer of float zone pulled semiconductor material, and process for producing the semiconductor waferSILTRONIC AG·Filed 2003·Granted Apr 11, 2006·1 cites·5 claims
- 0645US2004192015A1Method and device for the production of a silicon single crystal, silicon single crystal, and silicon semiconductor wafers with determined defect distributionsSILTRONIC AG·Filed 2004·Application pending·0 cites
- 0743US6238477B1Process and device for the production of a single crystalWACKER SILTRONIC HALBLEITERMAT·Filed 2000·Granted May 29, 2001·5 cites·5 claims
- 0843US6132507AProcess and device for the production of a single crystalWACKER SILTRONIC HALBLEITERMAT·Filed 1998·Granted Oct 17, 2000·9 cites·10 claims
- 0943US2004118334A1Silicon single crystal, and process for producing itWACKER SILTRONIC HALBLEITERMAT·Filed 2003·Application pending·0 cites
- 1033US7771530B2Process and apparatus for producing a silicon single crystalSILTRONIC AG·Filed 2002·Granted Aug 10, 2010·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →