Inventor · disambiguated record
Jan Vobecky
Also filed as: VOBECKY JAN
23 granted patents·2 pending applications·31 citations·filing 1999–2022
91Inventor score
Top patents by PatentIndex Score
25 records- 0174US8395244B2Fast recovery diodeVOBECKY JAN·Filed 2010·Granted Mar 12, 2013·6 cites·18 claims
- 0272US8450777B2Method for manufacturing a reverse-conducting insulated gate bipolar transistorRAHIMO MUNAF·Filed 2010·Granted May 28, 2013·3 cites·12 claims
- 0370US8803192B2Bipolar non-punch-through power semiconductor deviceABB TECHNOLOGY AG·Filed 2013·Granted Aug 12, 2014·3 cites·25 claims
- 0468US9543305B2Reverse conducting power semiconductor deviceABB TECHNOLOGY AG·Filed 2016·Granted Jan 10, 2017·2 cites·19 claims
- 0567US8912623B2Fast recovery diodeVOBECKY JAN·Filed 2010·Granted Dec 16, 2014·4 cites·9 claims
- 0667US8450793B2Semiconductor moduleRAHIMO MUNAF·Filed 2010·Granted May 28, 2013·3 cites·8 claims
- 0765US10115834B2Method for manufacturing an edge termination for a silicon carbide power semiconductor deviceABB SCHWEIZ AG·Filed 2017·Granted Oct 30, 2018·1 cites·20 claims
- 0861US9385223B2Reverse-conducting power semiconductor deviceABB TECHNOLOGY AG·Filed 2015·Granted Jul 5, 2016·1 cites·31 claims
- 0953US12513928B2Bidirectional thyristor deviceHITACHI ENERGY LTD·Filed 2021·Granted Dec 30, 2025·0 cites·15 claims
- 1050US12495565B2Bidirectional thyristor device with asymmetric characteristicsHITACHI ENERGY LTD·Filed 2021·Granted Dec 9, 2025·0 cites·9 claims
- 1150US12464749B2Power semiconductor deviceHITACHI ENERGY LTD·Filed 2021·Granted Nov 4, 2025·0 cites·20 claims
- 1247US12513975B2Module comprising a switchable bypass deviceHITACHI ENERGY LTD·Filed 2021·Granted Dec 30, 2025·0 cites·13 claims
- 1345US2024162295A1Gate-commuted thyristor cell with a base region having a varying thicknessHITACHI ENERGY LTD·Filed 2022·Application pending·0 cites
- 1444US10546795B2Power semiconductor device and method for producing a power semiconductor deviceABB SCHWEIZ AG·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 1544US2014370665A1Power semiconductor device and method for manufacturing such a power semiconductor deviceABB TECHNOLOGY AG·Filed 2014·Application pending·0 cites
- 1643US12094791B2Power semiconductor device with free-floating packaging conceptHITACHI ENERGY LTD·Filed 2019·Granted Sep 17, 2024·0 cites·21 claims
- 1740US11056582B2Bidirectional phase controlled thyristor (BiPCT)—a new semiconductor device conceptABB POWER GRIDS SWITZERLAND AG·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 1839US11107740B2Power semiconductor moduleABB POWER GRIDS SWITZERLAND AG·Filed 2017·Granted Aug 31, 2021·0 cites·23 claims
- 1939US10355117B2Phase control thyristorABB SCHWEIZ AG·Filed 2017·Granted Jul 16, 2019·0 cites·19 claims
- 2038US8501548B2Method for producing a semiconductor device using laser annealing for selectively activating implanted dopantsVOBECKY JAN·Filed 2010·Granted Aug 6, 2013·0 cites·26 claims
- 2137US10170557B2Thyristor with improved plasma spreadingABB SCHWEIZ AG·Filed 2017·Granted Jan 1, 2019·0 cites·21 claims
- 2237US8829571B2Punch-through semiconductor device and method for producing sameRAHIMO MUNAF·Filed 2012·Granted Sep 9, 2014·0 cites·19 claims
- 2337US8415239B2Method for manufacturing a power semiconductor deviceVOBECKY JAN·Filed 2010·Granted Apr 9, 2013·0 cites·24 claims
- 2434US6159830AProcess for adjusting the carrier lifetime in a semiconductor componentASEA BROWN BOVERI·Filed 1999·Granted Dec 12, 2000·8 cites·15 claims
- 2524US10069000B2Bipolar non-punch-through power semiconductor deviceABB TECHNOLOGY AG·Filed 2016·Granted Sep 4, 2018·0 cites·33 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →