Inventor · disambiguated record
Janet Wang
Also filed as: WANG JANET · WANG JANET S · WANG JANET S Y
23 granted patents·1 pending application·1,588 citations·filing 1997–2008
97Inventor score
Top patents by PatentIndex Score
24 records- 0198US6541816B2Planar structure for non-volatile memory devicesADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 1, 2003·126 cites·17 claims
- 0298US6269023B1Method of programming a non-volatile memory cell using a current limiterADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 31, 2001·248 cites·21 claims
- 0396US6468865B1Method of simultaneous formation of bitline isolation and periphery oxideADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 22, 2002·97 cites·30 claims
- 0495US6590811B1Higher program VT and faster programming rates based on improved erase methodsADVANCED MICRO DEVICES INC·Filed 2002·Granted Jul 8, 2003·92 cites·25 claims
- 0595US6567303B1Charge injectionADVANCED MICRO DEVICES INC·Filed 2002·Granted May 20, 2003·104 cites·25 claims
- 0695US6555436B2Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 29, 2003·56 cites·13 claims
- 0794US6618290B1Method of programming a non-volatile memory cell using a baking processADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 9, 2003·85 cites·11 claims
- 0894US6266281B1Method of erasing non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 24, 2001·223 cites·31 claims
- 0993US6465306B1Simultaneous formation of charge storage and bitline to wordline isolationADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 15, 2002·46 cites·21 claims
- 1093US6456533B1Higher program VT and faster programming rates based on improved erase methodsADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·62 cites·10 claims
- 1190US6456536B1Method of programming a non-volatile memory cell using a substrate biasADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·57 cites·11 claims
- 1289US6459618B1Method of programming a non-volatile memory cell using a drain biasADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 1, 2002·49 cites·11 claims
- 1389US6456531B1Method of drain avalanche programming of a non-volatile memory cellADVANCED MICRO DEVICES INC·Filed 2001·Granted Sep 24, 2002·54 cites·12 claims
- 1488US6172909B1Ramped gate technique for soft programming to tighten the Vt distributionADVANCED MICRO DEVICES INC·Filed 1999·Granted Jan 9, 2001·68 cites·11 claims
- 1587US6490205B1Method of erasing a non-volatile memory cell using a substrate biasADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 3, 2002·43 cites·17 claims
- 1685US6331953B1Intelligent ramped gate and ramped drain erasure for non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 18, 2001·38 cites·40 claims
- 1781US6465303B1Method of manufacturing spacer etch mask for silicon-oxide-nitride-oxide-silicon (SONOS) type nonvolatile memoryADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 15, 2002·22 cites·20 claims
- 1878US6233175B1Self-limiting multi-level programming statesADVANCED MICRO DEVICES INC·Filed 2000·Granted May 15, 2001·26 cites·9 claims
- 1977US5888867ANon-uniform threshold voltage adjustment in flash eproms through gate work function alterationADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 30, 1999·49 cites·14 claims
- 2074US6331952B1Positive gate erasure for non-volatile memory cellsADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 18, 2001·20 cites·14 claims
- 2154US6025240AMethod and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Feb 15, 2000·12 cites·25 claims
- 2246US6188101B1Flash EPROM cell with reduced short channel effect and method for providing sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Feb 13, 2001·10 cites·6 claims
- 2343US6410956B1Method and system for using a spacer to offset implant damage and reduce lateral diffusion in flash memory devicesADVANCED MICRO DEVICES INC·Filed 2000·Granted Jun 25, 2002·1 cites·17 claims
- 2436US2009179664A1Method and Apparatus for Controlling Leakage in a CircuitWANG JANET·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →