Inventor · disambiguated record
Jacob T. Williams
Also filed as: WILLIAMS JACOB · WILLIAMS JACOB T
14 granted patents·8 pending applications·36 citations·filing 2013–2025
88Inventor score
Top patents by PatentIndex Score
22 records- 0194US11521692B2Memory with one-time programmable (OTP) cells and reading operations thereofNXP USA INC·Filed 2021·Granted Dec 6, 2022·6 cites·20 claims
- 0291US11145382B1Non-volatile memory with a well bias generation circuitNXP USA INC·Filed 2020·Granted Oct 12, 2021·4 cites·20 claims
- 0387US8829964B1Compensated hysteresis circuitWILLIAMS JACOB T·Filed 2013·Granted Sep 9, 2014·12 cites·20 claims
- 0485US10796741B1Non-volatile memory with a select gate regulator circuitNXP USA INC·Filed 2019·Granted Oct 6, 2020·8 cites·20 claims
- 0583US11289144B1Non-volatile memory with virtual ground voltage provided to unselected column lines during memory write operationNXP USA INC·Filed 2020·Granted Mar 29, 2022·2 cites·23 claims
- 0681US11250898B2Non-volatile memory with multiplexer transistor regulator circuitNXP USA INC·Filed 2020·Granted Feb 15, 2022·2 cites·18 claims
- 0761US2025356899A1Array architecture for distributed mramEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 0860US2025322861A1Configuration bit with spin orbit torqueEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 0959US2025292815A1Anti-fuse and fuse in magnetoresistive deviceEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1059US2025329366A1Sensing standalone mtj without biasEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1158US10984846B2Reference generation for voltage sensing in a resistive memoryNXP USA INC·Filed 2019·Granted Apr 20, 2021·1 cites·20 claims
- 1258US2025295040A1Mtj antifuse with trim enable and method of operationEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1358US2025292849A1Reference resistor having variable resistanceEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1454US2025265146A1System and methods for error correction code scheme with inversion-based mitigation of biased manufacturing defectEVERSPIN TECHNOLOGIES INC·Filed 2025·Application pending·0 cites
- 1552US9219167B2Non-volatile memory (NVM) cellWILLIAMS JACOB T·Filed 2013·Granted Dec 22, 2015·0 cites·9 claims
- 1652US2024420796A1Distributed mram configuration bit and method of repairEVERSPIN TECHNOLOGIES INC·Filed 2024·Application pending·0 cites
- 1750US9397201B2Non-volatile memory (NVM) cell and a method of makingFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Jul 19, 2016·0 cites·11 claims
- 1850US9209810B2Ratioless near-threshold level translatorWILLIAMS JACOB T·Filed 2014·Granted Dec 8, 2015·1 cites·20 claims
- 1945US11056160B2Non-volatile memory with selectable hard writeNXP USA INC·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 2043US11581030B2Resistive memory with adjustable write parameterNXP USA INC·Filed 2020·Granted Feb 14, 2023·0 cites·22 claims
- 2142US11170849B1Memory with select line voltage controlNXP USA INC·Filed 2020·Granted Nov 9, 2021·0 cites·19 claims
- 2240US11521665B2Non-volatile memory having write detect circuitryNXP USA INC·Filed 2021·Granted Dec 6, 2022·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →