Inventor · disambiguated record
Jason Y. Wu
Also filed as: WU JASON Y
17 granted patents·30 citations·filing 2021–2023
90Inventor score
Files withKEPLER COMPUTING INC17
Top patents by PatentIndex Score
17 records- 0198US11955512B1Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structures and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Apr 9, 2024·3 cites·18 claims
- 0297US11659714B1Ferroelectric device film stacks with texturing layer, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted May 23, 2023·27 cites·19 claims
- 0380US12034086B1Trench capacitors with continuous dielectric layer and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Jul 9, 2024·0 cites·18 claims
- 0480US12029043B1Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applications and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Jul 2, 2024·0 cites·19 claims
- 0580US12022662B1Planar and trench capacitors for logic and memory applications and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Jun 25, 2024·0 cites·19 claims
- 0680US12016185B1Planar and trench capacitors for logic and memory applicationsKEPLER COMPUTING INC·Filed 2021·Granted Jun 18, 2024·0 cites·20 claims
- 0780US11996438B1Pocket flow for trench capacitors integrated with planar capacitors on a same substrate and method of fabricationKEPLER COMPUTING INC·Filed 2021·Granted May 28, 2024·0 cites·20 claims
- 0880US11985832B1Planar and trench capacitors with hydrogen barrier dielectric for logic and memory applicationsKEPLER COMPUTING INC·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 0980US11961877B1Dual hydrogen barrier layer for trench capacitors integrated with low density film for logic structuresKEPLER COMPUTING INC·Filed 2021·Granted Apr 16, 2024·0 cites·16 claims
- 1077US12094923B2Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based memory devicesKEPLER COMPUTING INC·Filed 2022·Granted Sep 17, 2024·0 cites·13 claims
- 1177US11908704B2Method of fabricating a perovskite-material based planar capacitor using rapid thermal annealing (RTA) methodologiesKEPLER COMPUTING INC·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 1276US11894417B2Method of fabricating a perovskite-material based trench capacitor using rapid thermal annealing (RTA) methodologiesKEPLER COMPUTING INC·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 1376US11769790B2Rapid thermal annealing (RTA) methodologies for integration of perovskite-material based trench capacitorsKEPLER COMPUTING INC·Filed 2022·Granted Sep 26, 2023·0 cites·21 claims
- 1470US11744081B1Ferroelectric device film stacks with texturing layer which is part of a bottom electrode, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted Aug 29, 2023·0 cites·19 claims
- 1570US11716858B1Ferroelectric device film stacks with texturing layer which is part of a bottom electrode and a barrier, and method of forming suchKEPLER COMPUTING INC·Filed 2021·Granted Aug 1, 2023·0 cites·19 claims
- 1668US12262543B1High density ferroelectric random access memory (FeRAM) devices and methods of fabricationKEPLER COMPUTING INC·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
- 1762US11832451B1High density ferroelectric random access memory (FeRAM) devices and methods of fabricationKEPLER COMPUTING INC·Filed 2021·Granted Nov 28, 2023·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →