Inventor · disambiguated record
James Wu
Also filed as: WU JAMES · WU JAMES CHENG-MING
14 granted patents·302 citations·filing 1998–2003
94Inventor score
Top patents by PatentIndex Score
14 records- 0176US6027969ACapacitor structure for a dynamic random access memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Feb 22, 2000·35 cites·24 claims
- 0272US6323118B1Borderless dual damascene contactTAIWAN SEMICONDUCTOR FOR MFG C·Filed 1998·Granted Nov 27, 2001·48 cites·23 claims
- 0370US6939726B2Via array monitor and method of monitoring induced electrical chargingTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 6, 2005·13 cites·24 claims
- 0470US6228736B1Modified method for forming cylinder-shaped capacitors for dynamic random access memory (DRAM)TAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted May 8, 2001·31 cites·11 claims
- 0568US6403416B1Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)TAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 11, 2002·29 cites·22 claims
- 0667US6265315B1Method for improving chemical/mechanical polish uniformity over rough topography for semiconductor integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 24, 2001·34 cites·28 claims
- 0761US6015733AProcess to form a crown capacitor structure for a dynamic random access memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 18, 2000·27 cites·22 claims
- 0860US6274426B1Self-aligned contact process for a crown shaped dynamic random access memory capacitor structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 14, 2001·25 cites·9 claims
- 0960US5854119ARobust method of forming a cylinder capacitor for DRAM circuitsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 29, 1998·24 cites·20 claims
- 1057US6020236AMethod to form capacitance node contacts with improved isolation in a DRAM processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Feb 1, 2000·15 cites·20 claims
- 1147US6555435B2Method to eliminate shorts between adjacent contacts due to interlevel dielectric voidsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Apr 29, 2003·2 cites·2 claims
- 1245US6017824APassivation etching procedure, using a polysilicon stop layer, for repairing embedded DRAM cellsTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 25, 2000·12 cites·23 claims
- 1336US6365464B1Method to eliminate shorts between adjacent contacts due to interlevel dielectric voidsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 2, 2002·5 cites·20 claims
- 1429US7482278B1Key-hole free process for high aspect ratio gap filling with reentrant spacerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 27, 2009·2 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →