Inventor · disambiguated record
Jaeduk Yu
Also filed as: YU JAEDUK
25 granted patents·3 pending applications·24 citations·filing 2019–2024
92Inventor score
Files withSAMSUNG ELECTRONICS CO LTD28
Top patents by PatentIndex Score
28 records- 0196US11615855B2Nonvolatile memory device and method of programming in a nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 28, 2023·8 cites·20 claims
- 0293US11275528B2Memory system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Mar 15, 2022·4 cites·20 claims
- 0392US11069417B2Memory system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·4 cites·20 claims
- 0490US11854623B2Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 26, 2023·2 cites·14 claims
- 0589US12119046B2Nonvolatile memory device having multi-stack memory block and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 15, 2024·1 cites·20 claims
- 0683US11132312B2Method of controlling initialization of nonvolatile memory device and memory system including nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 28, 2021·2 cites·19 claims
- 0778US11200002B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 14, 2021·1 cites·20 claims
- 0875US11467932B2Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mappingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Oct 11, 2022·1 cites·17 claims
- 0974US11380405B2Storage device calculating optimal read voltage using degradation informationSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 5, 2022·1 cites·18 claims
- 1068US12444470B2Nonvolatile memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1168US12224277B2Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1268US11881272B2Nonvolatile memory device and method of programming in a nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 23, 2024·0 cites·18 claims
- 1367US11829645B2Memory system and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 1467US11797405B2Nonvolatile memory device having cell-over-periphery (COP) structure with address re-mappingSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·16 claims
- 1563US11709629B2Nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·14 claims
- 1662US12147666B2Non-volatile memory device including multi-stack memory block and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 19, 2024·0 cites·20 claims
- 1762US2024389330A1Semiconductor devices and data storage systems including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1859US11581297B2Memory devices having cell over periphery structure, memory packages including the same, and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 14, 2023·0 cites·20 claims
- 1959US11183250B2Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methodsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 23, 2021·0 cites·18 claims
- 2058US12512170B2Method of determining and preprogramming over-erases groups of memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·18 claims
- 2158US12057391B2Semiconductor device and massive data storage system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2254US12494257B2Memory device including string select transistors having different threshold voltages and method of operating the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Dec 9, 2025·0 cites·20 claims
- 2349US2024221836A1Memory device pre-charging common source line and operating method of the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2448US11929118B2Non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 12, 2024·0 cites·20 claims
- 2548US2024249794A1Page buffer block and memory device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2647US11315649B2Memory controller, memory device and memory system having improved threshold voltage distribution characteristics and related operating methodsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 2744US11024363B2Memory device having different numbers of bits stored in memory cellsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 1, 2021·0 cites·20 claims
- 2840US11501847B2Nonvolatile memory device with address re-mappingSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 15, 2022·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →