Inventor · disambiguated record
Janbo Zhang
Also filed as: ZHANG JANBO
30 granted patents·22 pending applications·10 citations·filing 2021–2025
93Inventor score
Top patents by PatentIndex Score
52 records- 0194US11825644B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·12 claims
- 0294US11600622B2Method of forming semiconductor memory device comprises a bit line having a plurality of pins extending along a direction being perpendicular to a substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·18 claims
- 0393US11665885B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted May 30, 2023·2 cites·11 claims
- 0493US11380754B2Manufacturing method of semiconductor device and semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Jul 5, 2022·2 cites·14 claims
- 0591US11818880B2Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Nov 14, 2023·1 cites·20 claims
- 0687US11784184B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Oct 10, 2023·1 cites·20 claims
- 0785US2025016982A1Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 0883US12133373B2Semiconductor structure including capacitor and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Oct 29, 2024·0 cites·11 claims
- 0980US2025351405A1Method of fabricating semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2025·Application pending·0 cites
- 1078US12114487B2Semiconductor memory device having bit lines and isolation fins disposed on the substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·19 claims
- 1178US12100617B2Method of manufacturing semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·5 claims
- 1278US2024395605A1Method of manufacturing semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1376US12150291B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 1474US12200923B2Method of fabricating semiconductor device having bit line comprising a plurality of pins extending toward the substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·7 claims
- 1573US2024244818A1Method of fabricating semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 1672US12513891B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Dec 30, 2025·0 cites·10 claims
- 1772US12224283B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 1870US11706911B2Method of fabricating semiconductor memory having a second active region disposed at an outer side of a first active regionFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jul 18, 2023·0 cites·15 claims
- 1969US11676994B2Manufacturing method of semiconductor device and semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·18 claims
- 2068US12389617B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·9 claims
- 2167US12477722B2Semiconductor memory device comprises a bit line having a plurality of pins extending toward a substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·13 claims
- 2267US12363885B2Semiconductor memory device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 2367US2025169065A1Semiconductor device and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2467US2025338488A1Semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 2566US12225715B2Semiconductor device having semiconductor layers disposed between upper portions of the isolation structures and the active regionsFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Feb 11, 2025·0 cites·11 claims
- 2666US11980018B2Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 2766US11424247B1Semiconductor memory device having a second active region disposed at an outer side of a first active regionFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Aug 23, 2022·0 cites·14 claims
- 2865US11744062B2Semiconductor device having bit line comprising a plurality of pins extending toward the substrateFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·19 claims
- 2964US12274048B2Dynamic random access memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·11 claims
- 3064US2025311204A1Semiconductor structure and method for fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3163US12477753B2Semiconductor device and fabricating method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3263US2025227917A1Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3363US2025227921A1Semiconductor device and method of manufacturing the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3462US2025311186A1Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3561US11910595B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·9 claims
- 3661US2025294724A1Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 3761US2025089230A1Memory device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 3860US12394714B2Semiconductor device including dielectric insert structure directly under buried word line and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·17 claims
- 3960US12342536B2Semiconductor memory device having buried word line with a neck profile portionFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·13 claims
- 4060US11610900B2Semiconductor memory deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Mar 21, 2023·0 cites·13 claims
- 4159US2025081584A1Semiconductor device and fabricating method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2024·Application pending·0 cites
- 4258US2024421184A1Semiconductor device and method of forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 4358US2024298436A1Memory device and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 4457US12374621B2Semiconductor structure and method of manufacturing the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·10 claims
- 4557US2024276708A1Semiconductor structure and method for forming the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 4657US2024381617A1Semiconductor deviceFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 4757US2024363401A1Contact pad structure and manufacturing method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 4855US2023422481A1Semiconductor device and method of fabricating the sameFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 4955US2024237329A1Semiconductor device and fabricating method thereofFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 5053US12272594B2Semiconductor device and method of fabricating the same having a second active region disposed at an outer side of a first active regionFUJIAN JINHUA INTEGRATED CIRCUIT CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·15 claims
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →