Inventor · disambiguated record
Jeffrey E. Brighton
Also filed as: BRIGHTON JEFFREY E
20 granted patents·2 pending applications·554 citations·filing 1986–2014
96Inventor score
Top patents by PatentIndex Score
22 records- 0190US8344493B2Warpage control features on the bottomside of TSV die lateral to protruding bottomside tipsTEXAS INSTRUMENTS INC·Filed 2011·Granted Jan 1, 2013·14 cites·11 claims
- 0288US4753709AMethod for etching contact vias in a semiconductor deviceTEXAS INSTRUMENTS INC·Filed 1987·Granted Jun 28, 1988·82 cites·17 claims
- 0387US4795722AMethod for planarization of a semiconductor device prior to metallizationTEXAS INSTRUMENTS INC·Filed 1987·Granted Jan 3, 1989·94 cites·9 claims
- 0482US4966865AMethod for planarization of a semiconductor device prior to metallizationTEXAS INSTRUMENTS INC·Filed 1988·Granted Oct 30, 1990·61 cites·19 claims
- 0582US4839305AMethod of making single polysilicon self-aligned transistorTEXAS INSTRUMENTS INC·Filed 1988·Granted Jun 13, 1989·39 cites·18 claims
- 0679US4789885ASelf-aligned silicide in a polysilicon self-aligned bipolar transistorTEXAS INSTRUMENTS INC·Filed 1987·Granted Dec 6, 1988·38 cites·3 claims
- 0777US5132775AMethods for and products having self-aligned conductive pillars on interconnectsTEXAS INSTRUMENTS INC·Filed 1991·Granted Jul 21, 1992·61 cites·19 claims
- 0870US4996133ASelf-aligned tungsten-filled via process and via formed therebyTEXAS INSTRUMENTS INC·Filed 1987·Granted Feb 26, 1991·36 cites·19 claims
- 0966US4979010AVLSI self-aligned bipolar transistorTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 18, 1990·23 cites·12 claims
- 1062US4866008AMethods for forming self-aligned conductive pillars on interconnectsTEXAS INSTRUMENTS INC·Filed 1987·Granted Sep 12, 1989·28 cites·28 claims
- 1157US5104816APolysilicon self-aligned bipolar device including trench isolation and process of manufacturing sameTEXAS INSTRUMENTS INC·Filed 1990·Granted Apr 14, 1992·19 cites·2 claims
- 1253US9412869B2MOSFET with source side only stressTEXAS INSTRUMENTS INC·Filed 2014·Granted Aug 9, 2016·0 cites·3 claims
- 1351US2014154880A1Post-Polymer Revealing of Through-Substrate Via TipsTEXAS INSTRUMENTS INC·Filed 2014·Application pending·0 cites
- 1450US4799099ABipolar transistor in isolation well with angled cornersTEXAS INSTRUMENTS INC·Filed 1986·Granted Jan 17, 1989·13 cites·19 claims
- 1547US5436199APillar alignment and formation processTEXAS INSTRUMENTS INC·Filed 1993·Granted Jul 25, 1995·13 cites·7 claims
- 1646US2013062736A1Post-polymer revealing of through-substrate via tipsBRIGHTON JEFFREY E·Filed 2011·Application pending·0 cites
- 1744US4931144ASelf-aligned nonnested sloped viaTEXAS INSTRUMENTS INC·Filed 1989·Granted Jun 5, 1990·12 cites·7 claims
- 1843US6713361B2Method of manufacturing a bipolar junction transistor including undercutting regions adjacent to the emitter region to enlarge the emitter regionTEXAS INSTRUMENTS INC·Filed 2001·Granted Mar 30, 2004·3 cites·14 claims
- 1941US8928047B2MOSFET with source side only stressNAWAZ SAMUEL ZAFAR·Filed 2011·Granted Jan 6, 2015·0 cites·3 claims
- 2040US5025303AProduct of pillar alignment and formation processTEXAS INSTRUMENTS INC·Filed 1988·Granted Jun 18, 1991·8 cites·3 claims
- 2135US4842991ASelf-aligned nonnested sloped viaTEXAS INSTRUMENTS INC·Filed 1987·Granted Jun 27, 1989·6 cites·20 claims
- 2232US5212352ASelf-aligned tungsten-filled viaTEXAS INSTRUMENTS INC·Filed 1990·Granted May 18, 1993·4 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →