Inventor · disambiguated record
Jeong-Hyuk Choi
Also filed as: CHOI JEONG H · CHOI JEONG-HYUK
64 granted patents·9 pending applications·1,735 citations·filing 1993–2011
99Inventor score
Top patents by PatentIndex Score
73 records- 0194US6028788AFlash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Feb 22, 2000·150 cites·12 claims
- 0293US6661707B2Method of programming NAND-type flash memorySAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·91 cites·13 claims
- 0393US6417538B1Nonvolative semiconductor memory device with high impurity concentration under field oxide layerSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Jul 9, 2002·105 cites·11 claims
- 0492US6130838AStructure nonvolatile semiconductor memory cell array and method for fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Oct 10, 2000·79 cites·9 claims
- 0591US6483749B1Nonvolatile memory device having bulk bias contact structure in cell array regionSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 19, 2002·86 cites·21 claims
- 0691US6365457B1Method for manufacturing nonvolatile memory device using self-aligned source processSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Apr 2, 2002·74 cites·14 claims
- 0791US5943262ANon-volatile memory device and method for operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Aug 24, 1999·92 cites·17 claims
- 0889US6867453B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 15, 2005·28 cites·8 claims
- 0989US6487117B1Method for programming NAND-type flash memory device using bulk biasSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 26, 2002·57 cites·12 claims
- 1089US6337245B1Method for fabricating flash memory device and flash memory device fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jan 8, 2002·39 cites·10 claims
- 1187US6157575ANonvolatile memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 5, 2000·68 cites·10 claims
- 1286US7745287B2Floating trap type nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 29, 2010·11 cites·16 claims
- 1385US5590072ANonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Dec 31, 1996·61 cites·5 claims
- 1484US6197639B1Method for manufacturing NOR-type flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 6, 2001·86 cites·11 claims
- 1583US7223659B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 29, 2007·6 cites·18 claims
- 1683US5712178ANon-volatile semiconductor memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jan 27, 1998·42 cites·14 claims
- 1782US6861685B2Floating trap type nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 1, 2005·24 cites·15 claims
- 1881US7714378B2Nonvolatile semiconductor integrated circuit devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 11, 2010·10 cites·11 claims
- 1981US7589374B2Semiconductor device and related fabrication methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 15, 2009·7 cites·11 claims
- 2080US7829931B2Nonvolatile memory devices having control electrodes configured to inhibit parasitic coupling capacitanceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 9, 2010·9 cites·2 claims
- 2180US5661323AIntegrated circuit fuse programming and reading circuitsSAMSUNG ELECTRIC·Filed 1996·Granted Aug 26, 1997·68 cites·17 claims
- 2279US6927447B2Flash memory devices having a sloped trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Aug 9, 2005·20 cites·16 claims
- 2379US6330187B1Nonvolatile memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Dec 11, 2001·36 cites·17 claims
- 2479US5834352AMethods of forming integrated circuits containing high and low voltage field effect transistors thereinSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 10, 1998·45 cites·30 claims
- 2578US7317639B2Two-bit charge trap nonvolatile memory device and methods of operating and fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·5 cites·4 claims
- 2677US5712588AFuse element for a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Jan 27, 1998·42 cites·12 claims
- 2777US5472892AMethod of making a non-volatile floating gate memory device with peripheral transistorSAMSUNG ELECTRONICS CO LTD·Filed 1993·Granted Dec 5, 1995·47 cites·7 claims
- 2875US7538385B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 26, 2009·3 cites·20 claims
- 2975US7339242B2NAND-type flash memory devices and fabrication methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 4, 2008·5 cites·19 claims
- 3074US6204122B1Methods of forming nonvolatile integrated circuit memory devices having high capacitive coupling ratiosSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 20, 2001·36 cites·8 claims
- 3174US5789294AManufacturing method of nonvolatile memorySAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Aug 4, 1998·31 cites·8 claims
- 3272US7687860B2Semiconductor device including impurity regions having different cross-sectional shapesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 30, 2010·5 cites·15 claims
- 3371US7494868B2Methods of fabricating flash memory devices having a sloped trench isolation structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 24, 2009·4 cites·12 claims
- 3470US6347053B1Nonviolatile memory device having improved threshold voltages in erasing and programming operationsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Feb 12, 2002·17 cites·8 claims
- 3570US5663084AMethod for manufacturing nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Sep 2, 1997·30 cites·20 claims
- 3666US7859042B2Nonvolatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Dec 28, 2010·2 cites·20 claims
- 3766US7283393B2NAND flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 16, 2007·2 cites·20 claims
- 3866US6482708B2Nonvolatile memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 19, 2002·10 cites·10 claims
- 3966US5729491ANonvolatile integrated circuit memory devices having ground interconnect lattices with reduced lateral dimensionsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 17, 1998·21 cites·14 claims
- 4065US7494871B2Semiconductor memory devices and methods for forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 24, 2009·2 cites·14 claims
- 4165US6406955B1Method for manufacturing CMOS devices having transistors with mutually different punch-through voltage characteristicsSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jun 18, 2002·12 cites·10 claims
- 4263US6153469AMethod of fabricating cell of flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 28, 2000·21 cites·21 claims
- 4360US5841163AIntegrated circuit memory devices having wide and narrow channel stop layersSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Nov 24, 1998·17 cites·5 claims
- 4460US5792696ANonvolatile memory device and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Aug 11, 1998·18 cites·7 claims
- 4559US6312990B1Structure nonvolatile semiconductor memory cell array and method for fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 6, 2001·6 cites·18 claims
- 4659US6204530B1Flash-type nonvolatile semiconductor memory devices for preventing overerasureSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Mar 20, 2001·18 cites·17 claims
- 4758US7977730B2Memory device and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Jul 12, 2011·0 cites·13 claims
- 4858US7352035B1Flash memory devices and methods for fabricating flash memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 1, 2008·2 cites·20 claims
- 4958US6967373B2Two-bit charge trap nonvolatile memory device and methods of operating and fabrication the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 22, 2005·5 cites·20 claims
- 5058US6903406B2Cells of nonvolatile memory device with high inter-layer dielectric constantSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 7, 2005·10 cites·7 claims
Showing the top 50 of 73 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →