Inventor · disambiguated record
Jeong-Hee Chung
Also filed as: CHUNG JEONG-HEE
8 granted patents·1 pending application·636 citations·filing 2000–2005
89Inventor score
Technology areasH10P
Files withSAMSUNG ELECTRONICS CO LTD8
Top patents by PatentIndex Score
9 records- 0198US7201943B2Methods of forming atomic layers of a material on a substrate by sequentially introducing precursors of the materialSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 10, 2007·506 cites·33 claims
- 0292US6485895B1Methods for forming line patterns in semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 26, 2002·55 cites·25 claims
- 0387US6734480B2Semiconductor capacitors having tantalum oxide layersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 11, 2004·34 cites·11 claims
- 0478US6803176B2Methods for forming line patterns in semiconductor substratesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Oct 12, 2004·17 cites·48 claims
- 0576US7314806B2Methods of forming metal-insulator-metal (MIM) capacitors with separate seedSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·5 cites·18 claims
- 0676US6884675B2Semiconductor capacitors having tantalum oxide layers and methods for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 26, 2005·15 cites·23 claims
- 0754US6919243B2Methods of forming an integrated circuit capacitor in which a metal preprocessed layer is formed on an electrode thereofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jul 19, 2005·4 cites·21 claims
- 0843US2005026078A1Resist compositions including thermal crosslinking agentsFiled 2004·Application pending·0 cites
- 0939US6893501B2Method for manufacturing a semiconductor device having a capping layer covering a capacitor of the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 17, 2005·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →