Inventor · disambiguated record
Jeffrey S. Flynn
Also filed as: FLYNN JEFFREY S
16 granted patents·1 pending application·1,300 citations·filing 2000–2013
95Inventor score
Top patents by PatentIndex Score
17 records- 0199US6596079B1III-V nitride substrate boule and method of making and using the sameADVANCED TECH MATERIALS·Filed 2000·Granted Jul 22, 2003·427 cites·49 claims
- 0298US7919791B2Doped group III-V nitride materials, and microelectronic devices and device precursor structures comprising sameCREE INC·Filed 2002·Granted Apr 5, 2011·199 cites·18 claims
- 0397US6533874B1GaN-based devices using thick (Ga, Al, In)N base layersADVANCED TECH MATERIALS·Filed 2000·Granted Mar 18, 2003·232 cites·34 claims
- 0496US6447604B1Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminum, indium, gallium) nitride ((al,in,ga)n) substrates for opto-electronic and electronic devicesADVANCED TECH MATERIALS·Filed 2000·Granted Sep 10, 2002·306 cites·73 claims
- 0594US7915152B2III-V nitride substrate boule and method of making and using the sameCREE INC·Filed 2010·Granted Mar 29, 2011·12 cites·27 claims
- 0692US7118813B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2003·Granted Oct 10, 2006·42 cites·29 claims
- 0788US7390581B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2006·Granted Jun 24, 2008·9 cites·35 claims
- 0887US8174089B2High voltage switching devices and process for forming sameFLYNN JEFFREY S·Filed 2010·Granted May 8, 2012·6 cites·24 claims
- 0983US8390101B2High voltage switching devices and process for forming sameFLYNN JEFFREY S·Filed 2012·Granted Mar 5, 2013·4 cites·20 claims
- 1083US7655197B2III-V nitride substrate boule and method of making and using the sameCREE INC·Filed 2003·Granted Feb 2, 2010·19 cites·66 claims
- 1182US8212259B2III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substratesFLYNN JEFFREY S·Filed 2002·Granted Jul 3, 2012·22 cites·72 claims
- 1269US8043731B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2010·Granted Oct 25, 2011·1 cites·23 claims
- 1367US7700203B2Vicinal gallium nitride substrate for high quality homoepitaxyCREE INC·Filed 2008·Granted Apr 20, 2010·1 cites·20 claims
- 1463US7282744B2III-nitride optoelectronic device structure with high Al AlGaN diffusion barrierCREE INC·Filed 2004·Granted Oct 16, 2007·15 cites·30 claims
- 1562US7795707B2High voltage switching devices and process for forming sameCREE INC·Filed 2003·Granted Sep 14, 2010·5 cites·38 claims
- 1657US8698286B2High voltage switching devices and process for forming sameCREE INC·Filed 2013·Granted Apr 15, 2014·0 cites·29 claims
- 1735US2007018198A1High electron mobility electronic device structures comprising native substrates and methods for making the sameBRANDES GEORGE R·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →