Inventor · disambiguated record
Jeffery B. Hull
Also filed as: HULL JEFFERY B · HULL JEFFERY BRANDT
18 granted patents·8 pending applications·17 citations·filing 2008–2025
90Inventor score
Top patents by PatentIndex Score
26 records- 0194US11688808B2Transistor and methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 27, 2023·2 cites·13 claims
- 0291US11264395B1Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 1, 2022·2 cites·24 claims
- 0386US10483407B2Methods of forming si3nX, methods of forming insulator material between a control gate and charge-storage material of a programmable charge-storage transistor, and methods of forming an array of elevationally-extending strings of memory cells and a programmable charge-storage transistor manufactured in accordance with methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Nov 19, 2019·2 cites·28 claims
- 0486US8877624B2Semiconductor structuresHULL JEFFERY B·Filed 2013·Granted Nov 4, 2014·9 cites·7 claims
- 0584US11024736B2Transistor and methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 1, 2021·2 cites·14 claims
- 0684US2024421226A1Transistor and Methods of Forming Integrated CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0783US12113130B2Transistor and methods of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0880US12256553B2On-die formation of single-crystal semiconductor structuresMICRON TECHNOLOGY INC·Filed 2023·Granted Mar 18, 2025·0 cites·18 claims
- 0980US2025089318A1Transistor and Methods of Forming TransistorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1079US12432928B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Sep 30, 2025·0 cites·22 claims
- 1179US12057493B2Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2023·Granted Aug 6, 2024·0 cites·4 claims
- 1278US2024355909A1Integrated Circuitry, Method Used In The Fabrication Of A Vertical Transistor, And Method Used In The Fabrication Of Integrated CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1376US2025267876A1On-die formation of single-crystal semiconductor structuresMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1475US12191354B2Vertical transistors having at least 50% grain boundaries offset between top and bottom source/drain regions and the channel region that is vertically therebetweenMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·7 claims
- 1574US11871582B2Vertical transistor, integrated circuitry, method of forming a vertical transistor, and method of forming integrated circuitryMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 9, 2024·0 cites·14 claims
- 1672US11683937B2On-die formation of single-crystal semiconductor structuresMICRON TECHNOLOGY INC·Filed 2021·Granted Jun 20, 2023·0 cites·18 claims
- 1768US11777011B2Integrated circuitry, method used in the fabrication of a vertical transistor, and method used in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 3, 2023·0 cites·20 claims
- 1868US11417730B2Vertical transistors with channel region having vertically elongated crystal grains that individually are directly against both of the top and bottom source/drain regionsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 16, 2022·0 cites·6 claims
- 1958US10749041B2Programmable charge storage transistor, an array of elevationally-extending strings of memory cells, methods of forming Si3Nx, methods of forming insulator material that is between a control gate and charge-storage material of a programmable charge-storage transistor, methods of forming an array of elevationally-extending strings of memory cells, a programmable charge-storage transistor manufactured in accordance with methods, and an array of elevationally-extending strings of memory cells manMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 18, 2020·0 cites·17 claims
- 2057US2024274526A1Memory Circuitry And Methods Used In Forming Memory CircuitryMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2156US9105666B2Methods of fabricating semiconductor structuresMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 11, 2015·0 cites·20 claims
- 2255US11637175B2Vertical transistorsMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 25, 2023·0 cites·28 claims
- 2354US2024332015A1Methods of forming apparatus comprising crystalline semiconductor materials and metal silicide materials, and related apparatusMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2453US11387369B2Semiconductor structure formationMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 12, 2022·0 cites·14 claims
- 2552US2024334676A1Apparatus comprising crystalline semiconductor materials and metal silicide materials, and related methods and systemsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2646US2010112191A1Systems and associated methods for depositing materialsMICRON TECHNOLOGY INC·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →