Inventor · disambiguated record
Jei-Feng Hwang
Also filed as: HWANG JEI-FENG
7 granted patents·46 citations·filing 1999–2002
84Inventor score
Files withTAIWAN SEMICONDUCTOR MFG7
Top patents by PatentIndex Score
7 records- 0170US6569730B2High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted May 27, 2003·13 cites·2 claims
- 0247US6245609B1High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 12, 2001·8 cites·8 claims
- 0344US6396126B1High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 28, 2002·2 cites·12 claims
- 0442US6423590B2High voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jul 23, 2002·2 cites·12 claims
- 0542US6242313B1Use of polysilicon field plates to improve high voltage bipolar device breakdown voltageTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·12 cites·19 claims
- 0638US6291304B1Method of fabricating a high voltage transistor using P+ buried layerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 18, 2001·5 cites·8 claims
- 0733US6162695AField ring to improve the breakdown voltage for a high voltage bipolar deviceTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 19, 2000·4 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →