Inventor · disambiguated record
Jean-Pierre Joly
Also filed as: JOLY JEAN · JOLY JEAN-PIERRE · JOLY JEAN-PIERRE A
16 granted patents·1 pending application·763 citations·filing 1975–2007
94Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE9GOSSE FILATURE2DOLLFUS MIEG ET CIE1LIGNES TELEGRAPH TELEPHON1MESSIER BUGATTI1
Top patents by PatentIndex Score
17 records- 0195US5232508AGaseous phase chemical treatment reactorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1992·Granted Aug 3, 1993·461 cites·19 claims
- 0291US8048766B2Integrated circuit on high performance chipCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Nov 1, 2011·94 cites·28 claims
- 0385US7300853B2Thin layer semi-conductor structure comprising a heat distribution layerSOITEC SILICON ON INSULATOR·Filed 2004·Granted Nov 27, 2007·35 cites·28 claims
- 0478US6159323AProcess for selective transfer of a microstructure formed on an initial substrate to a final substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1998·Granted Dec 12, 2000·54 cites·19 claims
- 0576US6197695B1Process for the manufacture of passive and active components on the same insulating substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Mar 6, 2001·51 cites·32 claims
- 0660US7763915B2Three-dimensional integrated C-MOS circuit and method for producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Granted Jul 27, 2010·2 cites·18 claims
- 0756US6383972B1Preparation of a catalyst support in activated carbon fibresMESSIER BUGATTI·Filed 1998·Granted May 7, 2002·19 cites·25 claims
- 0850US6782757B2Membrane pressure sensor containing silicon carbide and method of manufactureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Aug 31, 2004·5 cites·26 claims
- 0950US6688181B1Membrane pressure sensor comprising silicon carbide and method for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Feb 10, 2004·13 cites·12 claims
- 1049US5373462ANon-volatile storage cell of the metal - ferroelectric - semiconductor typeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1993·Granted Dec 13, 1994·15 cites·2 claims
- 1145US4582917AMethod for preparing N-oxiranemethane N,N,N-trialkylammonium compoundsGOSSE FILATURE·Filed 1984·Granted Apr 15, 1986·6 cites·2 claims
- 1242US8246184B2Production of cavities that can be filled with a fluid material in an optical microtechnological componentSOURIAU JEAN-CHARLES·Filed 2007·Granted Aug 21, 2012·0 cites·8 claims
- 1338US2002089016A1Thin layer semi-conductor structure comprising a heat distribution layerFiled 2002·Application pending·0 cites
- 1434US7153747B2Method for making a transistor on a SiGe/SOI substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Dec 26, 2006·0 cites·16 claims
- 1534US4025404AOhmic contacts to thin film circuitsLIGNES TELEGRAPH TELEPHON·Filed 1975·Granted May 24, 1977·8 cites·6 claims
- 1627US4695641AN-oxiranemethane N,N,N-trialkylammonium compoundsDOLLFUS MIEG ET CIE·Filed 1985·Granted Sep 22, 1987·0 cites·2 claims
- 1725US4652267ADerivatives of N-oxiranemethane N,N,N-trialkylammonium, their preparation method and their use for the treatment of polyhydroxylated and polyminated polymersGOSSE FILATURE·Filed 1982·Granted Mar 24, 1987·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →