Inventor · disambiguated record
Jeong Dong Kim
Also filed as: KIM JEONG DONG
15 granted patents·4 pending applications·14 citations·filing 2017–2025
87Inventor score
Top patents by PatentIndex Score
19 records- 0196US11094782B1Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2020·Granted Aug 17, 2021·8 cites·25 claims
- 0288US11437483B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2020·Granted Sep 6, 2022·2 cites·25 claims
- 0379US12349411B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 0476US12369358B2Co-integrated high performance nanoribbon transistors with high voltage thick gate finFET devicesINTEL CORP·Filed 2019·Granted Jul 22, 2025·2 cites·18 claims
- 0575US12453145B2Single gated 3D nanowire inverter for high density thick gate SoC applicationsINTEL CORP·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 0675US11862703B2Gate-all-around integrated circuit structures having dual nanoribbon channel structuresINTEL CORP·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 0773US12249622B2Nanoribbon thick gate devices with differential ribbon spacing and width for SOC applicationsINTEL CORP·Filed 2019·Granted Mar 11, 2025·1 cites·18 claims
- 0868US2025185317A1Nanoribbon thick gate devices with differential ribbon spacing and width for soc applicationsINTEL CORP·Filed 2025·Application pending·0 cites
- 0967US11581404B2Gate-all-around integrated circuit structures having depopulated channel structuresINTEL CORP·Filed 2021·Granted Feb 14, 2023·0 cites·24 claims
- 1066US10134599B2Self-anchored catalyst metal-assisted chemical etchingUNIV ILLINOIS·Filed 2017·Granted Nov 20, 2018·1 cites·20 claims
- 1165US2025089312A1Gate-all-around integrated circuit structures having differential nanowire thickness and gate oxide thicknessINTEL CORP·Filed 2023·Application pending·0 cites
- 1261US11791380B2Single gated 3D nanowire inverter for high density thick gate SOC applicationsINTEL CORP·Filed 2019·Granted Oct 17, 2023·0 cites·24 claims
- 1355US10741705B2Optoelectronic device having an antireflective surfaceUNIV ILLINOIS·Filed 2018·Granted Aug 11, 2020·0 cites·21 claims
- 1450US11996403B2ESD diode solution for nanoribbon architecturesINTEL CORP·Filed 2019·Granted May 28, 2024·0 cites·11 claims
- 1549US12040395B2High voltage extended-drain MOS (EDMOS) nanowire transistorsINTEL CORP·Filed 2019·Granted Jul 16, 2024·0 cites·21 claims
- 1646US10347497B2Catalyst-assisted chemical etching with a vapor-phase etchantUNIV ILLINOIS·Filed 2017·Granted Jul 9, 2019·0 cites·11 claims
- 1744US2021184045A1High voltage ultra-low power thick gate nanoribbon transistors for soc applicationsINTEL CORP·Filed 2019·Application pending·0 cites
- 1843US10748781B2Catalyst-assisted chemical etching with a vapor-phase etchantUNIV ILLINOIS·Filed 2019·Granted Aug 18, 2020·0 cites·21 claims
- 1943US2021193844A1Strain based performance enhancement using selective metal oxidation inside gateINTEL CORP·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →