Inventor · disambiguated record
Jeoung Mo Koo
Also filed as: KOO JEOUNG MO
29 granted patents·6 pending applications·65 citations·filing 2004–2024
95Inventor score
Files withGLOBALFOUNDRIES SG PTE LTD29KOO JEOUNG MO2SAMSUNG ELECTRONICS CO LTD2CHARTERED SEMICONDUCTOR MFG1LOH WYE BOON1
Top patents by PatentIndex Score
35 records- 0194US11764273B2Semiconductor structures for galvanic isolationGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Sep 19, 2023·3 cites·20 claims
- 0294US11469169B2High voltage decoupling capacitor and integration methodsGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Oct 11, 2022·4 cites·20 claims
- 0392US11257949B2Transistor devices and methods of forming transistor devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Feb 22, 2022·3 cites·20 claims
- 0487US11791379B2Galvanic isolation using isolation break between redistribution layer electrodesGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 17, 2023·1 cites·17 claims
- 0586US11862693B2Semiconductor devices including a drain captive structure having an air gap and methods of forming the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Jan 2, 2024·2 cites·20 claims
- 0683US11282953B2Transistor devices and methods of forming a transistor deviceGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
- 0778US9362374B2Simple and cost-free MTP structureGLOBALFOUNDRIES SG PTE LTD·Filed 2014·Granted Jun 7, 2016·4 cites·22 claims
- 0874US10529819B2High voltage Schottky diode and manufacturing method thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jan 7, 2020·2 cites·20 claims
- 0974US10510831B2Low on resistance high voltage metal oxide semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2018·Granted Dec 17, 2019·2 cites·16 claims
- 1074US9831304B1Integrated circuits with deep trench isolations and methods for producing the sameGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Nov 28, 2017·3 cites·18 claims
- 1174US7259419B2Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 21, 2007·18 cites·4 claims
- 1273US10347773B2Split gate non-volatile memory (NVM) with improved programming efficiencyGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 9, 2019·2 cites·18 claims
- 1373US7642592B2Programmable memory device, integrated circuit including the programmable memory device, and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·5 cites·5 claims
- 1472US12176395B1Structures for a laterally-diffused metal-oxide-semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Granted Dec 24, 2024·0 cites·20 claims
- 1572US10032766B2VDMOS transistors, BCD devices including VDMOS transistors, and methods for fabricating integrated circuits with such devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2016·Granted Jul 24, 2018·2 cites·20 claims
- 1670US2025324695A1Structures for a laterally-diffused metal-oxide-semiconductor transistorGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 1769US10424655B2Dual gate LDMOS and a process of forming thereofGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Sep 24, 2019·1 cites·20 claims
- 1869US8410553B2Semiconductor structure including high voltage deviceKOO JEOUNG MO·Filed 2010·Granted Apr 2, 2013·3 cites·20 claims
- 1969US2023361173A1Galvanic isolation using isolation break between redistribution layer electrodesGLOBALFOUNDRIES SG PTE LTD·Filed 2023·Application pending·0 cites
- 2068US9525061B2Semiconductor device including an n-well structureGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Granted Dec 20, 2016·1 cites·20 claims
- 2166US8645876B2Methodology for performing post layer generation checkLOH WYE BOON·Filed 2011·Granted Feb 4, 2014·4 cites·20 claims
- 2262US9111992B2Semiconductor device including an n-well structureKOO JEOUNG MO·Filed 2011·Granted Aug 18, 2015·1 cites·20 claims
- 2361US11456306B2Nonvolatile memory device with a metal-insulator-metal (MIM) capacitor in a substrate and integration schemesGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Sep 27, 2022·0 cites·16 claims
- 2460US8853783B2ESD protection circuitGLOBALFOUNDRIES SG PTE LTD·Filed 2012·Granted Oct 7, 2014·1 cites·20 claims
- 2559US2025248055A1Structure with capacitive junction between silicide layer and electrode and related methodGLOBALFOUNDRIES SG PTE LTD·Filed 2024·Application pending·0 cites
- 2658US10892317B2Power trench capacitor compatible with deep trench isolation processGLOBALFOUNDRIES SG PTE LTD·Filed 2019·Granted Jan 12, 2021·0 cites·18 claims
- 2757US7867862B2Semiconductor structure including high voltage deviceCHARTERED SEMICONDUCTOR MFG·Filed 2007·Granted Jan 11, 2011·1 cites·19 claims
- 2855US11955514B2Field-effect transistors with a gate structure in a dual-depth trench isolation structureGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Apr 9, 2024·0 cites·18 claims
- 2955US11791392B2Extended-drain metal-oxide-semiconductor devices with a notched gate electrodeGLOBALFOUNDRIES SG PTE LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 3052US2023301087A1Circuit structure and related multi-time programmable (mtp) memory cellGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Application pending·0 cites
- 3151US12336220B2Extended-drain metal-oxide-semiconductor devices with a gap between the drain and body wellsGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Granted Jun 17, 2025·0 cites·10 claims
- 3251US10355072B2Power trench capacitor compatible with deep trench isolation processGLOBALFOUNDRIES SG PTE LTD·Filed 2017·Granted Jul 16, 2019·0 cites·12 claims
- 3351US2023335580A1Electronic device with galvanic isolation and integration methodsGLOBALFOUNDRIES SG PTE LTD·Filed 2022·Application pending·0 cites
- 3449US11502193B2Extended-drain metal-oxide-semiconductor devices with a multiple-thickness buffer dielectric layerGLOBALFOUNDRIES SG PTE LTD·Filed 2020·Granted Nov 15, 2022·0 cites·20 claims
- 3533US2016322262A1Integration of devicesGLOBALFOUNDRIES SG PTE LTD·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →