Inventor · disambiguated record
Jeffrey R. Laroche
Also filed as: LAROCHE JEFFREY · LAROCHE JEFFREY R
30 granted patents·7 pending applications·177 citations·filing 2006–2025
96Inventor score
Files withRAYTHEON CO29RAYTHEON BBN TECHNOLOGIES CORP4CHELAKARA RAM V1HOKE WILLIAM E1LAROCHE JEFFREY R1
Top patents by PatentIndex Score
37 records- 0195US9478508B1Microwave integrated circuit (MMIC) damascene electrical interconnect for microwave energy transmissionRAYTHEON CO·Filed 2015·Granted Oct 25, 2016·19 cites·8 claims
- 0293US8212294B2Structure having silicon CMOS transistors with column III-V transistors on a common substrateHOKE WILLIAM E·Filed 2010·Granted Jul 3, 2012·36 cites·8 claims
- 0392US7968865B2Boron aluminum nitride diamond heterostructureRAYTHEON CO·Filed 2009·Granted Jun 28, 2011·21 cites·6 claims
- 0491US7834456B2Electrical contacts for CMOS devices and III-V devices formed on a silicon substrateRAYTHEON CO·Filed 2009·Granted Nov 16, 2010·27 cites·20 claims
- 0590US10224285B2Nitride structure having gold-free contact and methods for forming such structuresRAYTHEON CO·Filed 2017·Granted Mar 5, 2019·7 cites·4 claims
- 0690US10096550B2Nitride structure having gold-free contact and methods for forming such structuresRAYTHEON CO·Filed 2017·Granted Oct 9, 2018·7 cites·13 claims
- 0790US9356045B2Semiconductor structure having column III-V isolation regionsRAYTHEON CO·Filed 2013·Granted May 31, 2016·13 cites·26 claims
- 0889US10566428B2Method for forming gate structures for group III-V field effect transistorsRAYTHEON CO·Filed 2018·Granted Feb 18, 2020·6 cites·7 claims
- 0981US11515410B2Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structuresRAYTHEON CO·Filed 2020·Granted Nov 29, 2022·1 cites·16 claims
- 1080US7994550B2Semiconductor structures having both elemental and compound semiconductor devices on a common substrateRAYTHEON CO·Filed 2009·Granted Aug 9, 2011·9 cites·15 claims
- 1176US11476154B2Field effect transistor having improved gate structuresRAYTHEON CO·Filed 2019·Granted Oct 18, 2022·2 cites·13 claims
- 1276US11177216B2Nitride structures having low capacitance gate contacts integrated with copper damascene structuresRAYTHEON CO·Filed 2018·Granted Nov 16, 2021·2 cites·34 claims
- 1376US8466555B2Gold-free ohmic contactsCHELAKARA RAM V·Filed 2011·Granted Jun 18, 2013·8 cites·11 claims
- 1475US9761445B2Methods and structures for forming microstrip transmission lines on thin silicon carbide on insulator (SICOI) wafersRAYTHEON CO·Filed 2016·Granted Sep 12, 2017·2 cites·12 claims
- 1575US7557378B2Boron aluminum nitride diamond heterostructureRAYTHEON CO·Filed 2006·Granted Jul 7, 2009·5 cites·5 claims
- 1673US11747704B2Integration of electronics with lithium niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2022·Granted Sep 5, 2023·0 cites·12 claims
- 1773US8853745B2Silicon based opto-electric circuitsTABATABAIE KAMAL·Filed 2009·Granted Oct 7, 2014·6 cites·8 claims
- 1873US2023408885A1Integration of electronics with lithium niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2023·Application pending·0 cites
- 1971US9331153B2Methods and structures for forming microstrip transmission lines on thin silicon on insulator (SOI) wafersRAYTHEON CO·Filed 2013·Granted May 3, 2016·2 cites·17 claims
- 2071US8575666B2Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductorLAROCHE JEFFREY R·Filed 2011·Granted Nov 5, 2013·4 cites·10 claims
- 2170US11205953B2Heterogeneously integrated power converter assemblyRAYTHEON CO·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 2269US2025309862A1Multi-layer resonator assembly and method for fabricating sameRAYTHEON CO·Filed 2025·Application pending·0 cites
- 2368US11784248B2Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structuresRAYTHEON CO·Filed 2022·Granted Oct 10, 2023·0 cites·16 claims
- 2467US11340512B2Integration of electronics with Lithium Niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2020·Granted May 24, 2022·0 cites·11 claims
- 2567US10566896B2Heterogeneously integrated power converter assemblyRAYTHEON CO·Filed 2018·Granted Feb 18, 2020·0 cites·11 claims
- 2658US11239326B2Electrode structure for field effect transistorRAYTHEON CO·Filed 2019·Granted Feb 1, 2022·0 cites·19 claims
- 2757US12334906B2Multi-layer resonator assembly and method for fabricating sameRAYTHEON CO·Filed 2021·Granted Jun 17, 2025·0 cites·19 claims
- 2856US11710708B2On-chip EMF isolation of an integrated circuit coupled with photoconductive semiconductor switch under an on-chip faraday cageRAYTHEON CO·Filed 2021·Granted Jul 25, 2023·0 cites·19 claims
- 2954US2024061310A1Integration of electronics with lithium niobate photonicsRAYTHEON BBN TECHNOLOGIES CORP·Filed 2023·Application pending·0 cites
- 3053US11581448B2Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistorsRAYTHEON CO·Filed 2021·Granted Feb 14, 2023·0 cites·14 claims
- 3150US11848662B2Tunable monolithic group III-nitride filter banksRAYTHEON CO·Filed 2020·Granted Dec 19, 2023·0 cites·20 claims
- 3250US2019097001A1Electrode structure for field effect transistorRAYTHEON CO·Filed 2017·Application pending·0 cites
- 3349US2022128409A1Raman spectroscopyRAYTHEON CO·Filed 2020·Application pending·0 cites
- 3445US12406901B2Wafer-scale direct bonded array core block for an active electronically steerable array (AESA)RAYTHEON CO·Filed 2021·Granted Sep 2, 2025·0 cites·20 claims
- 3543US2015059640A1Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windowsRAYTHEON CO·Filed 2013·Application pending·0 cites
- 3641US10340812B2Flexible power converter architecture based on interposer and modular electronic unitsRAYTHEON CO·Filed 2017·Granted Jul 2, 2019·0 cites·18 claims
- 3740US2022320152A1PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH LATERALLY FABRICATED ALONGSIDE GaN ON Si FIELD-EFFECT TRANSISTORSRAYTHEON CO·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →