Inventor · disambiguated record
Jeffrey M. Leathersich
Also filed as: LEATHERSICH JEFFREY M
4 granted patents·8 pending applications·1 citations·filing 2019–2024
57Inventor score
Files withAKOUSTIS INC12
Top patents by PatentIndex Score
12 records- 0171US11856858B2Methods of forming doped crystalline piezoelectric thin films via MOCVD and related doped crystalline piezoelectric thin filmsAKOUSTIS INC·Filed 2019·Granted Dec 26, 2023·1 cites·14 claims
- 0270US2025017115A1Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devicesAKOUSTIS INC·Filed 2024·Application pending·0 cites
- 0364US2025055434A1Methods of forming piezoelectric layers having alternating polarizationsAKOUSTIS INC·Filed 2022·Application pending·0 cites
- 0464US2023212781A1Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd systems and methods of forming single crystal piezoelectric layers using the sameAKOUSTIS INC·Filed 2023·Application pending·0 cites
- 0562US12102010B2Methods of forming films including scandium at low temperatures using chemical vapor deposition to provide piezoelectric resonator devices and/or high electron mobility transistor devicesAKOUSTIS INC·Filed 2021·Granted Sep 24, 2024·0 cites·33 claims
- 0662US11618968B2Apparatus including horizontal flow reactor with a central injector column having separate conduits for low-vapor pressure metalorganic precursors and other precursors for formation of piezoelectric layers on wafersAKOUSTIS INC·Filed 2020·Granted Apr 4, 2023·0 cites·16 claims
- 0761US2025274100A1Methods of forming piezoelectric layers having alternating polarizations and related bulk acoustic wave filter devicesAKOUSTIS INC·Filed 2022·Application pending·0 cites
- 0853US2023235459A1Apparatus for forming single crystal piezoelectric layers using low-vapor pressure metalorganic precursors in cvd reactors with temperature-controlled injector columns and methods of forming single crystal piezoelectric layers using the sameAKOUSTIS INC·Filed 2022·Application pending·0 cites
- 0952US2024088860A1Methods of forming group iii-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layersAKOUSTIS INC·Filed 2023·Application pending·0 cites
- 1046US11832521B2Methods of forming group III-nitride single crystal piezoelectric thin films using ordered deposition and stress neutral template layersAKOUSTIS INC·Filed 2020·Granted Nov 28, 2023·0 cites·16 claims
- 1144US2022352455A1METHODS OF FORMING EPITAXIAL Al1-xScxN FILMS WITH DOPING TO ADDRESS SEGREGATION OF SCANDIUM AND FILM STRESS LEVELS AND RELATED RESONATOR DEVICESAKOUSTIS INC·Filed 2022·Application pending·0 cites
- 1242US2023246618A1Methods of forming single crystal piezoelectric layers using low temperature epitaxy and related single crystalline piezoelectric resonator filmsAKOUSTIS INC·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →