Inventor · disambiguated record
Jeffrey S. Leib
Also filed as: LEIB JEFFREY S
26 granted patents·8 pending applications·122 citations·filing 2013–2025
96Inventor score
Top patents by PatentIndex Score
34 records- 0198US10121875B1Replacement gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2017·Granted Nov 6, 2018·61 cites·25 claims
- 0297US10886383B2Replacement gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2020·Granted Jan 5, 2021·4 cites·12 claims
- 0396US11664439B2Trench contact structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2021·Granted May 30, 2023·2 cites·22 claims
- 0496US11508626B2Dual metal silicide structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2020·Granted Nov 22, 2022·3 cites·20 claims
- 0596US10741669B2Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2017·Granted Aug 11, 2020·10 cites·11 claims
- 0694US11088261B2Trench contact structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2019·Granted Aug 10, 2021·3 cites·25 claims
- 0794US11018222B1Metallization in integrated circuit structuresINTEL CORP·Filed 2019·Granted May 25, 2021·16 cites·20 claims
- 0892US12255247B2Trench contact structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Granted Mar 18, 2025·0 cites·20 claims
- 0992US10840151B2Dual metal silicide structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2019·Granted Nov 17, 2020·5 cites·20 claims
- 1092US10790378B2Replacement gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2018·Granted Sep 29, 2020·3 cites·14 claims
- 1190US10727313B2Dual metal gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2017·Granted Jul 28, 2020·3 cites·16 claims
- 1289US10957782B2Trench contact structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2017·Granted Mar 23, 2021·2 cites·18 claims
- 1388US11948997B2Trench contact structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2023·Granted Apr 2, 2024·0 cites·20 claims
- 1487US12225740B2Dual metal silicide structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Granted Feb 11, 2025·0 cites·20 claims
- 1587US10796968B2Dual metal silicide structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2017·Granted Oct 6, 2020·3 cites·20 claims
- 1685US10854732B2Dual metal gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2020·Granted Dec 1, 2020·1 cites·20 claims
- 1784US9704744B2Method of forming a wrap-around contact on a semiconductor deviceINTEL CORP·Filed 2013·Granted Jul 11, 2017·5 cites·10 claims
- 1882US2025194201A1Trench contact structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2025·Application pending·0 cites
- 1981US11961767B2Dual metal silicide structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 2078US11482611B2Replacement gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2020·Granted Oct 25, 2022·0 cites·20 claims
- 2177US11955532B2Dual metal gate structure having portions of metal gate layers in contact with a gate dielectricINTEL CORP·Filed 2020·Granted Apr 9, 2024·0 cites·20 claims
- 2277US11342445B2Differentiated voltage threshold metal gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 2376US2025142939A1Dual metal silicide structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2025·Application pending·0 cites
- 2463US9711399B2Direct plasma densification process and semiconductor devicesINTEL CORP·Filed 2013·Granted Jul 18, 2017·1 cites·17 claims
- 2560US2024186403A1Dual metal gate structures for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 2656US2024429126A1Conductive lines having molybdenum liner and tungsten fill for advanced integrated circuit structure fabricationINTEL CORP·Filed 2023·Application pending·0 cites
- 2754US10297499B2Method of forming a wrap-around contact on a semiconductor deviceINTEL CORP·Filed 2017·Granted May 21, 2019·0 cites·15 claims
- 2854US2025221023A1Integrated circuit structure with backside contact extensionINTEL CORP·Filed 2023·Application pending·0 cites
- 2952US12051698B2Fabrication of gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layerINTEL CORP·Filed 2020·Granted Jul 30, 2024·0 cites·23 claims
- 3051US2023207466A1Recessed and self-aligned buried power railGULER LEONARD P·Filed 2021·Application pending·0 cites
- 3148US11063151B2Metal chemical vapor deposition approaches for fabricating wrap-around contacts and resulting structuresINTEL CORP·Filed 2017·Granted Jul 13, 2021·0 cites·25 claims
- 3246US2023143021A1Integrated circuit interconnect structures including copper-free viasINTEL CORP·Filed 2021·Application pending·0 cites
- 3344US10096513B2Direct plasma densification process and semiconductor devicesINTEL CORP·Filed 2017·Granted Oct 9, 2018·0 cites·21 claims
- 3436US2020066645A1Microelectronic devices and methods for enhancing interconnect reliability performance using tungsten containing adhesion layers to enable cobalt interconnectsINTEL CORP·Filed 2016·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jeffrey S. Leib files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →