Inventor · disambiguated record
Jeng-Hwa Liao
Also filed as: LIAO JENG HWA
6 granted patents·7 pending applications·11 citations·filing 2009–2022
74Inventor score
Top patents by PatentIndex Score
13 records- 0172US8969946B2Semiconductor device and methods of manufacturingMACRONIX INT CO LTD·Filed 2013·Granted Mar 3, 2015·4 cites·15 claims
- 0267US10354924B2Semiconductor memory device and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·15 claims
- 0367US8169835B2Charge trapping memory cell having bandgap engineered tunneling structure with oxynitride isolation layerLIAO JENG-HWA·Filed 2009·Granted May 1, 2012·5 cites·19 claims
- 0463US9236497B2Methods for fabricating semiconductor deviceMACRONIX INT CO LTD·Filed 2013·Granted Jan 12, 2016·1 cites·3 claims
- 0552US2010178758A1Methods for fabricating dielectric layer and non-volatile memoryMACRONIX INT CO LTD·Filed 2009·Application pending·0 cites
- 0651US12027584B2Transistor structure and manufacturing method thereofMACRONIX INT CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·16 claims
- 0743US2010210085A1Method for fabricating non-volatile memoryMACRONIX INT CO LTD·Filed 2010·Application pending·0 cites
- 0842US2015340236A1Method for reducing defects in polysilicon layersMACRONIX INT CO LTD·Filed 2014·Application pending·0 cites
- 0939US2014117356A1Semiconductor structure for improved oxide fill inMACRONIX INT CO LTD·Filed 2012·Application pending·0 cites
- 1037US8791022B2Method for reducing wordline bridge rateLIAO JENG-HWA·Filed 2010·Granted Jul 29, 2014·0 cites·19 claims
- 1134US2014048866A1Gate structure and method of manufacturing thereofLIAO JENG HWA·Filed 2012·Application pending·0 cites
- 1233US2017069762A1Memory device and method for fabricating the sameMACRONIX INT CO LTD·Filed 2015·Application pending·0 cites
- 1332US2013168754A1Method for fabricating a semiconductor device with increased reliabilityLIAO JENG HWA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →