Inventor · disambiguated record

Jen-Cheng Liu

Also filed as: LIU JEN-CHENG

373 granted patents·107 pending applications·2,703 citations·filing 1999–2025

99Inventor score

Technology areasH10W H10F H01L H10P H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD346 TAIWAN SEMICONDUCTOR MFG72 CHEN SZU-YING8 CHUANG CHUN-CHIEH7 LIN JENG-SHYAN7

Top patents by PatentIndex Score

480 records

0199US11596800B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 7, 2023·6 cites·20 claims
0299US11063038B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·7 cites·20 claims
0399US10276619B2Semiconductor device structure with a conductive feature passing through a passivation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·220 cites·20 claims
0499US8802538B1Methods for hybrid wafer bondingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 12, 2014·269 cites·20 claims
0598US10566288B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·20 cites·20 claims
0698US9666624B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 30, 2017·13 cites·20 claims
0798US9337235B2Method and apparatus for image sensor packagingTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 10, 2016·227 cites·20 claims
0898US8736006B1Backside structure for a BSI image sensor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·31 cites·20 claims
0998US8390089B2Image sensor with deep trench isolation structureCHEN SZU-YING·Filed 2010·Granted Mar 5, 2013·53 cites·20 claims
1098US8278152B2Bonding process for CMOS image sensorLIU JEN-CHENG·Filed 2009·Granted Oct 2, 2012·129 cites·19 claims
1197US11942368B2Through silicon vias and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·3 cites·11 claims
1297US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
1397US11437420B2Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
1497US11404534B2Backside capacitor techniquesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·4 cites·20 claims
1597US11282769B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·4 cites·20 claims
1697US9142586B2Pad design for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 22, 2015·37 cites·20 claims
1797US9136298B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 15, 2015·15 cites·20 claims
1897US6323121B1Fully dry post-via-etch cleaning method for a damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 27, 2001·206 cites·22 claims
1996US12315843B2Hybrid bonding technology for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·2 cites·20 claims
2096US11791332B2Stacked semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
2196US11756862B2Oversized via as through-substrate-via (TSV) stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·2 cites·20 claims
2296US10147682B2Structure for stacked logic performance improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 4, 2018·13 cites·20 claims
2396US9620548B1Image sensor with wide contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·14 cites·20 claims
2496US8957358B2CMOS image sensor chips with stacked scheme and methods for forming the sameWAN MENG-HSUN·Filed 2012·Granted Feb 17, 2015·37 cites·20 claims
2596US8878325B2Elevated photodiode with a stacked schemeTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Nov 4, 2014·12 cites·20 claims
2696US8629524B2Apparatus for vertically integrated backside illuminated image sensorsWANG TZU-JUI·Filed 2012·Granted Jan 14, 2014·26 cites·12 claims
2796US8513587B2Image sensor with anti-reflection layer and method of manufacturing the sameWANG TZU-JUI·Filed 2011·Granted Aug 20, 2013·31 cites·20 claims
2896US8455971B2Apparatus and method for improving charge transfer in backside illuminated image sensorCHEN SZU-YING·Filed 2011·Granted Jun 4, 2013·35 cites·20 claims
2996US7588993B2Alignment for backside illumination sensorTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Sep 15, 2009·31 cites·14 claims
3095US11011567B2Structure and method for 3D image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·3 cites·20 claims
3195US10304886B2Back-side deep trench isolation (BDTI) structure for pinned photodiode image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·12 cites·20 claims
3295US10177186B2Pixel structure of image sensor and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 8, 2019·11 cites·20 claims
3395US9553020B2Interconnect structure for connecting dies and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·12 cites·20 claims
3495US9136302B2Apparatus for vertically integrated backside illuminated image sensorsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Sep 15, 2015·11 cites·20 claims
3595US8531565B2Front side implanted guard ring structure for backside illuminated image sensorWANG WEN-DE·Filed 2010·Granted Sep 10, 2013·16 cites·20 claims
3694US12015099B2Semiconductor sensor and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 18, 2024·2 cites·20 claims
3794US11901387B2Image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
3894US11211419B2Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·20 claims
3994US10629592B2Through silicon via design for stacking integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·7 cites·20 claims
4094US10461109B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·9 cites·20 claims
4194US10153316B2Mechanisms for forming image sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·6 cites·20 claims
4294US10090349B2CMOS image sensor chips with stacked scheme and methods for forming the sameWAN MENG HSUN·Filed 2012·Granted Oct 2, 2018·18 cites·20 claims
4394US9123615B2Vertically integrated image sensor chips and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 1, 2015·11 cites·20 claims
4494US9035445B2Seal ring structure with a metal padTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted May 19, 2015·14 cites·20 claims
4593US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
4693US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
4793US11342374B2Mechanisms for forming image-sensor device with deep-trench isolation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·2 cites·20 claims
4893US11107767B2Structure for standard logic performance improvement having a back-side through-substrate-viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·6 cites·20 claims
4993US9659987B2Approach for reducing pixel pitch using vertical transfer gates and implant isolation regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 23, 2017·10 cites·20 claims
5093US9356069B2Photo diode and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·4 cites·20 claims

Showing the top 50 of 480 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →