Inventor · disambiguated record
Jean-Michel Mirabel
Also filed as: MIRABEL JEAN-MICHEL
17 granted patents·1 pending application·234 citations·filing 1995–2016
92Inventor score
Files withSGS THOMSON MICROELECTRONICS7ST MICROELECTRONICS SA4STMICROELECTRONICS ROUSSET2MIRABEL JEAN-MICHEL1NIEL STEPHAN1
Top patents by PatentIndex Score
18 records- 0192US5592417ANon-volatile programmable bistable multivibrator, programmable by the source, for memory redundancy circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 7, 1997·90 cites·30 claims
- 0291US5606523ANon-volatile programmable bistable multivibrator in predefined initial state for memory redundancy circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Feb 25, 1997·96 cites·48 claims
- 0375US7675106B2Non-volatile reprogrammable memoryST MICROELECTRONICS SA·Filed 2006·Granted Mar 9, 2010·8 cites·19 claims
- 0467US7242621B2Floating-gate MOS transistor with double control gateUNIV D AIX MARSEILLE I·Filed 2005·Granted Jul 10, 2007·7 cites·13 claims
- 0559US9691866B2Memory cell having a vertical selection gate formed in an FDSOI substrateSTMICROELECTRONICS ROUSSET·Filed 2016·Granted Jun 27, 2017·1 cites·20 claims
- 0650US5561621ANon-volatile programmable bistable multivibrator with reduced parasitics in reading mode notably for memory redundancy circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 1, 1996·13 cites·44 claims
- 0744US5675539AMethod and circuit for testing memories in integrated circuit formSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 7, 1997·9 cites·22 claims
- 0843US9461129B2Memory cell having a vertical selection gate formed in an FDSOI substrateSTMICROELECTRONICS ROUSSET·Filed 2015·Granted Oct 4, 2016·0 cites·9 claims
- 0943US8426973B2Integrated circuit of decreased sizeNIEL STEPHAN·Filed 2009·Granted Apr 23, 2013·0 cites·8 claims
- 1039US6455386B1High and low voltage transistor manufacturing methodST MICROELECTRONICS SA·Filed 1999·Granted Sep 24, 2002·6 cites·29 claims
- 1133US6156609AEEPROM device manufacturing methodST MICROELECTRONICS SA·Filed 1999·Granted Dec 5, 2000·2 cites·3 claims
- 1232US7183160B2Manufacturing process for a flash memory and flash memory thus producedST MICROELECTRONICS ROUSSET·Filed 2004·Granted Feb 27, 2007·0 cites·16 claims
- 1330US8995190B2Reducing the programming current for memory matricesMIRABEL JEAN-MICHEL·Filed 2012·Granted Mar 31, 2015·0 cites·10 claims
- 1430US6829170B2Method of controlling an electronic non-volatile memory and associated deviceST MICROELECTRONICS SA·Filed 2003·Granted Dec 7, 2004·2 cites·35 claims
- 1529US5737266AMethods and apparatus for programming content-addressable memories using floating-gate memory cellsSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 7, 1998·0 cites·18 claims
- 1629US5721706ANon-volatile-programmable bistable multivibrator, programmable by the source, for memory redundancy circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Feb 24, 1998·0 cites·11 claims
- 1729US5677870ANon-volatile programmable bistable multivibrator, programmable by the source, for the memory redundancy circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Oct 14, 1997·0 cites·29 claims
- 1828US2002089011A1Eeprom cell with a single polysilicon level and a self-algned tunnel areaFiled 1998·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Jean-Michel Mirabel files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →