Inventor · disambiguated record
Jea Gun Park
Also filed as: PARK JEA G · PARK JEA GUN
54 granted patents·21 pending applications·400 citations·filing 1997–2024
98Inventor score
Files withIUCF HYU23UNIV HANYANG IND UNIV COOP FOUND15PARK JEA GUN12SAMSUNG ELECTRONICS CO LTD12PAIK UN-GYU2
Top patents by PatentIndex Score
75 records- 0191US10453510B2Memory deviceUNIV HANYANG IND UNIV COOP FOUND·Filed 2017·Granted Oct 22, 2019·9 cites·5 claims
- 0289US10854254B2Memory deviceUNIV HANYANG IND UNIV COOP FOUND·Filed 2019·Granted Dec 1, 2020·2 cites·12 claims
- 0389US6884694B2Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the sameSILTRON INC·Filed 2003·Granted Apr 26, 2005·52 cites·27 claims
- 0489US6045610AMethods of manufacturing monocrystalline silicon ingots and wafers by controlling pull rate profiles in a hot zone furnanceSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Apr 4, 2000·102 cites·54 claims
- 0588US6503594B2Silicon wafers having controlled distribution of defects and slipSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jan 7, 2003·36 cites·28 claims
- 0688US6485807B1Silicon wafers having controlled distribution of defects, and methods of preparing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 26, 2002·37 cites·42 claims
- 0786US10497562B1Method for manufacturing gallium nitride substrate using the hydride vapor phase epitaxyUNIV HANYANG IND UNIV COOP FOUND·Filed 2018·Granted Dec 3, 2019·5 cites·7 claims
- 0884US6780238B2Argon/ammonia rapid thermal annealing for silicon wafersSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 24, 2004·26 cites·53 claims
- 0983US11050014B2Memory deviceUNIV HANYANG IND UNIV COOP FOUND·Filed 2015·Granted Jun 29, 2021·3 cites·9 claims
- 1083US9831426B2CBRAM device and manufacturing method thereofIUCF-HYU·Filed 2015·Granted Nov 28, 2017·4 cites·15 claims
- 1183US7338882B2Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the samePARK JEA-GUN·Filed 2005·Granted Mar 4, 2008·11 cites·29 claims
- 1281US7491342B2Bonded semiconductor substrate manufacturing method thereofSUMCO CORP·Filed 2004·Granted Feb 17, 2009·33 cites·6 claims
- 1380US10580964B2Memory deviceUNIV HANYANG IND UNIV COOP FOUND·Filed 2017·Granted Mar 3, 2020·5 cites·19 claims
- 1478US11968874B2Organic light-emitting display device including quantum dotsIUCF HYU·Filed 2020·Granted Apr 23, 2024·1 cites·4 claims
- 1578US11258935B2Dual image sensor including quantum dot layerUNIV HANYANG IND UNIV COOP FOUND·Filed 2018·Granted Feb 22, 2022·2 cites·19 claims
- 1677US10373825B1Method for manufacturing gallium nitride substrate using core-shell nanoparticleUNIV HANYANG IND UNIV COOP FOUND·Filed 2018·Granted Aug 6, 2019·2 cites·12 claims
- 1775US8315080B2Luminescence device and method of manufacturing the samePARK JEA GUN·Filed 2008·Granted Nov 20, 2012·5 cites·31 claims
- 1875US6821344B2Czochralski pullers including heat shield housings having sloping top and bottomSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 23, 2004·15 cites·6 claims
- 1973US9287132B2Multi-selective polishing slurry composition and a semiconductor element production method using the sameIUCF HYU·Filed 2015·Granted Mar 15, 2016·2 cites·13 claims
- 2071US11133458B2Multi-bit magnetic memory deviceIUCF HYU·Filed 2019·Granted Sep 28, 2021·1 cites·11 claims
- 2171US10783945B2Memory deviceUNIV HANYANG IND UNIV COOP FOUND·Filed 2019·Granted Sep 22, 2020·0 cites·8 claims
- 2271US6676753B2Czochralski pullers for manufacturing monocrystalline silicon ingots, including heat shield having sloped portionsSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Jan 13, 2004·11 cites·13 claims
- 2370US12082508B2Memory device containing magnetic tunnel junctionIUCF HYU·Filed 2019·Granted Sep 3, 2024·1 cites·15 claims
- 2470US8050081B2Conductive organic nonvolatile memory device having nanocrystals surrounded by amorphous barrierHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Nov 1, 2011·3 cites·9 claims
- 2570US6409833B2Insulating-containing ring-shaped heat shields and support members for Czochralski pullersSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 25, 2002·10 cites·2 claims
- 2669US10516097B2Memory deviceIUCF HYU·Filed 2015·Granted Dec 24, 2019·3 cites·14 claims
- 2768US8062547B2CMP slurry, preparation method thereof and method of polishing substrate using the samePAIK UN GYU·Filed 2006·Granted Nov 22, 2011·5 cites·20 claims
- 2867US10886274B2Two-terminal vertical 1T-DRAM and method of fabricating the sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2017·Granted Jan 5, 2021·1 cites·14 claims
- 2965US2023240094A1Slurry for polishing copper, display device manufacturing method using the same, and display deviceSAMSUNG DISPLAY CO LTD·Filed 2023·Application pending·0 cites
- 3064US11932794B2Quantum-dot based on graded-shell structure and manufacturing method of the sameUNIV HANYANG IND UNIV COOP FOUND·Filed 2020·Granted Mar 19, 2024·0 cites·13 claims
- 3164US11827825B2Quantum-dot based on multi-shell structure including luminescent dopantIUCF HYU·Filed 2020·Granted Nov 28, 2023·0 cites·9 claims
- 3261US8361177B2Polishing slurry, method of producing same, and method of polishing substrateK C TECH CO LTD·Filed 2008·Granted Jan 29, 2013·0 cites·5 claims
- 3354US10643681B2Memory deviceUNIV HANYANG IND UNIV COOP FOUND·Filed 2019·Granted May 5, 2020·0 cites·9 claims
- 3453US2008305574A1Method of manufacturing nonvolatile memory device using conductive organic polymer having nanocrystals embedded thereinSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3551US9711569B2Image sensor and method for driving sameIUCF-HYU·Filed 2013·Granted Jul 18, 2017·0 cites·16 claims
- 3651US8233313B2Conductive organic non-volatile memory device with nanocrystals embedded in an amorphous barrier layerPARK JEA-GUN·Filed 2011·Granted Jul 31, 2012·0 cites·14 claims
- 3751US2024322031A1Transistor based on compact drain and hetero-material structureIUCF HYU·Filed 2022·Application pending·0 cites
- 3851US2006032149A1Polishing slurry, method of producing same, and method of polishing substrateIUCF HYU·Filed 2005·Application pending·0 cites
- 3949US12417379B2Neuron and neuromorphic system including the neuronIUCF HYU·Filed 2019·Granted Sep 16, 2025·0 cites·10 claims
- 4049US8860109B2Capacitor-less memory devicePARK JEA-GUN·Filed 2009·Granted Oct 14, 2014·2 cites·15 claims
- 4149US2024237566A1Artificial synapse device based on resistive change memory device, and method for manufacturing sameIUCF HYU·Filed 2024·Application pending·0 cites
- 4248US12507444B2Neuron, neuromorphic system including the sameIUCF HYU·Filed 2019·Granted Dec 23, 2025·0 cites·10 claims
- 4348US12295146B2Selection device and memory device using the sameIUCF HYU·Filed 2019·Granted May 6, 2025·0 cites·8 claims
- 4448US11093824B2Neuromorphic device and method of driving the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Aug 17, 2021·0 cites·18 claims
- 4548US2024322023A1Thyristor based on charge plasma and cross-point memory array including the sameIUCF HYU·Filed 2022·Application pending·0 cites
- 4647US11296276B2Memory device based on multi-bit perpendicular magnetic tunnel junctionUNIV HANYANG IND UNIV COOP FOUND·Filed 2019·Granted Apr 5, 2022·0 cites·13 claims
- 4747US7592239B2Flexible single-crystal film and method of manufacturing the sameUNIV SOGANG IND UNIV COOP FOUN·Filed 2004·Granted Sep 22, 2009·3 cites·14 claims
- 4847US6472040B1Semi-pure and pure monocrystalline silicon ingots and wafersSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Oct 29, 2002·5 cites·4 claims
- 4944US9163314B2CMP slurry composition for tungstenPARK JEA-GUN·Filed 2012·Granted Oct 20, 2015·0 cites·2 claims
- 5044US2009275188A1Slurry for polishing phase change material and method for patterning polishing phase change material using the samePARK JEA GUN·Filed 2009·Application pending·0 cites
Showing the top 50 of 75 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jea Gun Park files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →