Inventor · disambiguated record
Je-Min Ryu
Also filed as: RYU JE-MIN
24 granted patents·2 pending applications·84 citations·filing 2012–2023
94Inventor score
Top patents by PatentIndex Score
26 records- 0195US10083722B2Memory device for performing internal process and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·14 cites·19 claims
- 0294US11295808B2Memory device transmitting and receiving data at high speed and low powerSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 5, 2022·5 cites·20 claims
- 0392US10592467B2Semiconductor memory device and method of operating a semiconductor device in a processor mode or a normal modeSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 17, 2020·9 cites·12 claims
- 0492US10410685B2Memory device for performing internal process and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 10, 2019·7 cites·20 claims
- 0591US11010316B2Memory device for adjusting memory capacity per channel and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 18, 2021·7 cites·13 claims
- 0689US10262699B2Memory device for performing internal process and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 16, 2019·5 cites·21 claims
- 0786US11769547B2Memory device transmitting and receiving data at high speed and low powerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Sep 26, 2023·1 cites·19 claims
- 0884US8804448B2Method of selecting anti-fuses and method of monitoring anti-fusesPARK JU-SEOP·Filed 2012·Granted Aug 12, 2014·11 cites·15 claims
- 0978US12444457B2Memory device transmitting and receiving data at high speed and low powerSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Oct 14, 2025·0 cites·20 claims
- 1077US10224114B2Semiconductor device using a parallel bit operation and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 5, 2019·5 cites·17 claims
- 1174US9287009B2Repair circuit and fuse circuitSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 15, 2016·4 cites·20 claims
- 1270US10768824B2Stacked memory device and a memory chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Sep 8, 2020·1 cites·20 claims
- 1370US10319451B2Semiconductor device having chip ID generation circuitSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 11, 2019·4 cites·20 claims
- 1468US10331354B2Stacked memory device and a memory chip including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 25, 2019·1 cites·19 claims
- 1565US9343175B2Fuse data reading circuit having multiple reading modes and related devices, systems and methodsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted May 17, 2016·3 cites·21 claims
- 1662US11836097B2Memory device for adjusting memory capacity per channel and memory system including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 5, 2023·0 cites·17 claims
- 1761US8897055B2Memory device, method of operating the same, and electronic device having the memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Nov 25, 2014·2 cites·20 claims
- 1860US11239210B2Semiconductor die for determining load of through silicon via and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 1, 2022·0 cites·12 claims
- 1959US10468092B2Memory device for controlling refresh operation by using cell characteristic flagsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Nov 5, 2019·1 cites·20 claims
- 2058US10671464B2Memory device comprising status circuit and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 2, 2020·1 cites·19 claims
- 2154US9601216B2Semiconductor device including redundancy cell arraySAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 21, 2017·1 cites·20 claims
- 2253US9123407B2Devices and methods for deciding data read startSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Sep 1, 2015·1 cites·19 claims
- 2349US10916525B2Semiconductor die for determining load of through silicon via and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Feb 9, 2021·0 cites·8 claims
- 2449US10242731B2Memory device for controlling refresh operation by using cell characteristic flagsHYUN KI HO·Filed 2015·Granted Mar 26, 2019·1 cites·20 claims
- 2537US2014241085A1Semiconductor memory device for performing disable operation using anti-fuse and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 2629US2017200507A1Memory system including memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →