Inventor · disambiguated record

Jeonggyu Song

Also filed as: SONG JEONGGYU

26 granted patents·9 pending applications·8 citations·filing 2019–2025

92Inventor score

Technology areasH10P H10D H01G H10B H10W

Files withSAMSUNG ELECTRONICS CO LTD35

Top patents by PatentIndex Score

35 records

0194US11081338B2Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 3, 2021·4 cites·20 claims
0288US2025344417A1Electrical device and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
0385US11569341B2Dielectric thin-film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 31, 2023·1 cites·26 claims
0485US2025301675A1Electrical device and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
0584US12414313B2High-K capacitor dielectric having a metal oxide area comprising boron, electrical device and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·19 claims
0683US12513919B2Method of manufacturing metal nitride film and electronic device including metal nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 30, 2025·0 cites·13 claims
0781US12068360B2Capacitor, semiconductor device including the same, and method of fabricating capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
0881US11978761B2Capacitor, semiconductor device including the same, and method of fabricating capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 7, 2024·0 cites·15 claims
0981US11227912B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·13 claims
1079US11810946B2Integrated circuit device including capacitor with metal nitrate interfacial layerSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
1179US11798980B2Integrated circuit device and electronic device including capacitor with interfacial layer containing metal element, other element, nitrogen, and oxygenSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
1278US12276026B2Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·19 claims
1378US12071690B2Thin film structure including dielectric material layer, and method of manufacturing the same, and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 27, 2024·1 cites·19 claims
1477US12477757B2Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·27 claims
1575US12324145B2Semiconductor device with capping conductive layer on an electrode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·18 claims
1674US11935916B2Dielectric thin-film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 19, 2024·0 cites·20 claims
1773US11869926B2High-k capacitor dielectric having a metal oxide area comprising boron, electrical device, and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 9, 2024·0 cites·26 claims
1872US11594592B2Capacitor, semiconductor device including the same, and method of fabricating capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·13 claims
1972US2024363679A1Anti-ferroelectric thin-film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2071US11424317B2Method of manufacturing metal nitride film and electronic device including metal nitride filmSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 23, 2022·0 cites·21 claims
2170US2024297210A1Capacitor, semiconductor device comprising the capacitor, and method of fabricating the capacitorSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
2269US12051717B2Anti-ferroelectric thin-film structure and electronic device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·27 claims
2367US11728160B2Method of forming oxide film including two non-oxygen elements, method of manufacturing semiconductor device, method of forming dielectric film, and semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
2466US12349373B2Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 1, 2025·0 cites·5 claims
2564US11658024B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted May 23, 2023·0 cites·10 claims
2663US11761089B2Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 19, 2023·0 cites·18 claims
2762US11665884B2Semiconductor device with capping conductive layer on an electrode and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
2860US10867784B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
2960US2025239460A1Method of etching metal oxide layer by using atomic layer etchingSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
3058US12408353B2Device with dielectric metal oxide layers and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 2, 2025·0 cites·16 claims
3156US2024213306A1Capacitor and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
3256US2024170212A1Capacitor, semiconductor device including the capacitor, and electronic apparatus including the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
3355US2024234031A1Semiconductor device and semiconductor apparatus and electronic apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
3455US2024429043A1Method of forming insulating film by using atomic layer depositionSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
3554US12034036B2Semiconductor device and semiconductor apparatus including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·26 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →