Inventor · disambiguated record
Jenoe Tihanyi
Also filed as: BELL GUIDO · TIHANYI JENOE · TIHANYI JENOEE
120 granted patents·1 pending application·4,164 citations·filing 1973–2006
99Inventor score
Files withSIEMENS AG68INFINEON TECHNOLOGIES AG49GANTIOLER JOSEF MATTHIAS1SICED ELECT DEV GMBH & CO KG1
Top patents by PatentIndex Score
121 records- 0199US5438215APower MOSFETSIEMENS AG·Filed 1994·Granted Aug 1, 1995·578 cites·9 claims
- 0298US6362505B1MOS field-effect transistor with auxiliary electrodeSIEMENS AG·Filed 2000·Granted Mar 26, 2002·237 cites·14 claims
- 0398US5973360AField effect-controllable semiconductor componentSIEMENS AG·Filed 1998·Granted Oct 26, 1999·312 cites·10 claims
- 0497US7453308B2Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Nov 18, 2008·42 cites·20 claims
- 0597US6274904B1Edge structure and drift region for a semiconductor component and production methodSIEMENS AG·Filed 1999·Granted Aug 14, 2001·214 cites·9 claims
- 0697US4728826AMOSFET switch with inductive loadSIEMENS AG·Filed 1986·Granted Mar 1, 1988·140 cites·5 claims
- 0796US6184545B1Semiconductor component with metal-semiconductor junction with low reverse currentINFINEON TECHNOLOGIES AG·Filed 1998·Granted Feb 6, 2001·180 cites·8 claims
- 0895US6384456B1Field-effect transistor having a high packing density and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 7, 2002·114 cites·18 claims
- 0994US6326656B1Lateral high-voltage transistorSIEMENS AG·Filed 2000·Granted Dec 4, 2001·99 cites·6 claims
- 1093US6376890B1High-voltage edge termination for planar structuresSIEMENS AG·Filed 1999·Granted Apr 23, 2002·115 cites·14 claims
- 1191US7091573B2Power transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 15, 2006·62 cites·8 claims
- 1290US6445038B1Silicon on insulator high-voltage switchINFINEON TECHNOLOGIES AG·Filed 1998·Granted Sep 3, 2002·85 cites·13 claims
- 1390US6309920B1Bipolar transistor which can be controlled by field effect and method for producing the sameSIEMENS AG·Filed 1998·Granted Oct 30, 2001·103 cites·5 claims
- 1490US5815027ACircuit configuration for detecting a load current of a power semiconductor component with a source-side loadSIEMENS AG·Filed 1996·Granted Sep 29, 1998·67 cites·5 claims
- 1589US6459142B1Power MOSFETINFINEON TECHNOLOGIES AG·Filed 2000·Granted Oct 1, 2002·50 cites·27 claims
- 1689US6271562B1Semiconductor component which can be controlled by a field effectINFINEON TECHNOLOGIES AG·Filed 1999·Granted Aug 7, 2001·106 cites·15 claims
- 1789US4691129ADrive circuit for a power MOSFET with source-side loadSIEMENS AG·Filed 1986·Granted Sep 1, 1987·44 cites·2 claims
- 1887US6870201B1High voltage resistant edge structure for semiconductor componentsINFINEON TECHNOLOGIES AG·Filed 1998·Granted Mar 22, 2005·74 cites·30 claims
- 1987US6686614B2Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diodeINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 3, 2004·44 cites·7 claims
- 2087US6628491B1Semiconductor component with a circuit for driving an electrical loadSIEMENS AG·Filed 1999·Granted Sep 30, 2003·55 cites·13 claims
- 2186US5086364ACircuitry for detecting a short circuit of a load in series with an fetSIEMENS AG·Filed 1991·Granted Feb 4, 1992·47 cites·10 claims
- 2285US5945708AField-effect-controllable, vertical semiconductor component and method for producing the sameSIEMENS AG·Filed 1997·Granted Aug 31, 1999·53 cites·11 claims
- 2385US4247860AMIS Field effect transistor for high source-drain voltagesSIEMENS AG·Filed 1978·Granted Jan 27, 1981·28 cites·19 claims
- 2484US7050763B2Method and device for transferring a signal from a signal source to a signal sink in a systemINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 23, 2006·44 cites·9 claims
- 2584US4101922AField effect transistor with a short channel lengthSIEMENS AG·Filed 1977·Granted Jul 18, 1978·41 cites·10 claims
- 2683US7999343B2Semiconductor component with a space-saving edge termination, and method for production of such componentINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 16, 2011·10 cites·19 claims
- 2782US7087981B2Metal semiconductor contact, semiconductor component, integrated circuit arrangement and methodINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 8, 2006·23 cites·12 claims
- 2881US5352932ATrigger circuit for a power FET with a load on the source sideSIEMENS AG·Filed 1993·Granted Oct 4, 1994·35 cites·9 claims
- 2979US7560783B2Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and methodINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jul 14, 2009·5 cites·28 claims
- 3079US4730228AOvertemperature detection of power semiconductor componentsSIEMENS AG·Filed 1986·Granted Mar 8, 1988·39 cites·11 claims
- 3179US4190850AMIS field effect transistor having a short channel lengthSIEMENS AG·Filed 1978·Granted Feb 26, 1980·40 cites·18 claims
- 3278US7173306B2Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zoneINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 6, 2007·22 cites·21 claims
- 3377US6768169B2Transistor having compensation zones enabling a low on-resistance and a high reverse voltageINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jul 27, 2004·22 cites·15 claims
- 3477US6028457ACMOS comparatorSIEMENS AG·Filed 1997·Granted Feb 22, 2000·33 cites·11 claims
- 3577US5724218APower transistor with short-circuit protectionSIEMENS AG·Filed 1996·Granted Mar 3, 1998·32 cites·10 claims
- 3676US6735065B2Semiconductor moduleINFINEON TECHNOLOGIES AG·Filed 2002·Granted May 11, 2004·25 cites·19 claims
- 3776US4893165ABipolar transistor controllable by field effectSIEMENS AG·Filed 1989·Granted Jan 9, 1990·32 cites·11 claims
- 3875US7724064B2Circuit arrangement having a transistor component and a freewheeling elementINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 25, 2010·6 cites·20 claims
- 3975US6061221ATemperature-protected electrical switch componentSIEMENS AG·Filed 1999·Granted May 9, 2000·29 cites·12 claims
- 4075US4952827ACircuit arrangement for controlling the load current in a power MOSFETSIEMENS AG·Filed 1989·Granted Aug 28, 1990·22 cites·3 claims
- 4175US4737667ADriving circuitry for a MOSFET having a source loadSIEMENS AG·Filed 1987·Granted Apr 12, 1988·21 cites·4 claims
- 4274US6686625B2Field effect-controllable semiconductor component with two-directional blocking, and a method of producing the semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Feb 3, 2004·19 cites·15 claims
- 4374US5656968ACircuit arrangement for regulating the load current of a power MOSFETSIEMENS AG·Filed 1995·Granted Aug 12, 1997·28 cites·6 claims
- 4474US5272399ACircuit limiting the load current of a power MOSFETSIEMENS AG·Filed 1993·Granted Dec 21, 1993·26 cites·5 claims
- 4573US6803629B2Vertical field-effect transistor with compensation zones and terminals at one side of a semiconductor bodyINFINEON TECHNOLOGIES AG·Filed 2001·Granted Oct 12, 2004·18 cites·10 claims
- 4672US6479876B1Vertical power MOSFETFiled 1998·Granted Nov 12, 2002·33 cites·6 claims
- 4771US7423325B2Lateral field-effect-controllable semiconductor component for RF applicationsINFINEON TECHNOLOGIES AG·Filed 2004·Granted Sep 9, 2008·16 cites·20 claims
- 4871US7148736B1Power switchINFINEON TECHNOLOGIES AG·Filed 2000·Granted Dec 12, 2006·15 cites·10 claims
- 4971US5914619ATrigger circuit for a power fet having a source-side loadSIEMENS AG·Filed 1997·Granted Jun 22, 1999·24 cites·7 claims
- 5070US6861706B2Compensation semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 1, 2005·15 cites·5 claims
Showing the top 50 of 121 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →