Inventor · disambiguated record
Jen-Chou Tseng
Also filed as: TSENG JEN-CHOU
65 granted patents·3 pending applications·694 citations·filing 2004–2023
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45TAIWAN SEMICONDUCTOR MFG11WINBOND ELECTRONICS CORP5LIN WUN-JIE2LAI DA-WEI1
Top patents by PatentIndex Score
68 records- 0198US9368487B1Semiconductor device with dynamic low voltage triggering mechanismTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 14, 2016·47 cites·25 claims
- 0297US8735993B2FinFET body contact and method of making sameLO CHING-HSIUNG·Filed 2012·Granted May 27, 2014·412 cites·19 claims
- 0396US9172242B2Electrostatic discharge protection for three dimensional integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 27, 2015·24 cites·20 claims
- 0494US9608616B1Power clamp circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 28, 2017·10 cites·20 claims
- 0594US8928093B2FinFET body contact and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 6, 2015·14 cites·20 claims
- 0694US8779517B2FinFET-based ESD devices and methods for forming the sameLIN WUN-JIE·Filed 2012·Granted Jul 15, 2014·24 cites·20 claims
- 0793US9117669B2Apparatus for ESD protectionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 25, 2015·13 cites·15 claims
- 0892US10325906B2ESD testing structure, method of using same and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 18, 2019·7 cites·20 claims
- 0992US9397098B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·13 cites·20 claims
- 1092US9312384B2FinFET body contact and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·10 cites·20 claims
- 1191US10629588B2ESD hard backend structures in nanometer dimensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 21, 2020·3 cites·20 claims
- 1291US9190519B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·8 cites·20 claims
- 1390US9559008B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·5 cites·20 claims
- 1490US8730626B2Electrostatic discharge protectionTSENG JEN-CHOU·Filed 2011·Granted May 20, 2014·16 cites·20 claims
- 1588US9318621B2Rotated STI diode on FinFET technologyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 19, 2016·7 cites·20 claims
- 1688US8779518B2Apparatus for ESD protectionTAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD·Filed 2012·Granted Jul 15, 2014·9 cites·19 claims
- 1786US10283210B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·4 cites·20 claims
- 1886US10170461B2ESD hard backend structures in nanometer dimensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 1, 2019·2 cites·20 claims
- 1986US8823129B2Latch-up prevention structure and method for ultra-small high voltage tolerant cellLAI DA-WEI·Filed 2010·Granted Sep 2, 2014·9 cites·20 claims
- 2085US10158225B2ESD protection system utilizing gate-floating scheme and control circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·2 cites·20 claims
- 2184US10109366B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·4 cites·20 claims
- 2284US10096589B2Fin ESD protection diode and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 9, 2018·3 cites·20 claims
- 2383US12002706B2Structure and method for enhancing robustness of ESD deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 4, 2024·0 cites·20 claims
- 2483US11264374B2Method of forming electrostatic discharge (ESD) testing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·1 cites·20 claims
- 2583US10957687B2ESD hard backend structures in nanometer dimensionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 23, 2021·1 cites·20 claims
- 2683US10803967B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 13, 2020·1 cites·20 claims
- 2783US10643726B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·3 cites·20 claims
- 2883US9917079B2Electrostatic discharge protection circuit and method for radio frequency circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 13, 2018·4 cites·20 claims
- 2983US9443840B2Methods and apparatus for ESD structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 13, 2016·5 cites·20 claims
- 3082US12471326B2Guard ring and circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·4 claims
- 3182US10026727B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 17, 2018·2 cites·20 claims
- 3282US9537306B2ESD protection system utilizing gate-floating scheme and control circuit thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·2 cites·20 claims
- 3380US8664723B1Integrated circuit structures having base resistance tuning regions and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 4, 2014·5 cites·20 claims
- 3479US9450044B2Guard ring structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Sep 20, 2016·2 cites·20 claims
- 3578US10026640B2Structure and method for enhancing robustness of ESD deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 17, 2018·2 cites·20 claims
- 3677US8809905B2Vertical BJT and SCR for ESDLIN WUN-JIE·Filed 2011·Granted Aug 19, 2014·5 cites·20 claims
- 3776US9979186B2Electrostatic discharge protection for three dimensional integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·2 cites·20 claims
- 3875US11450735B2Method of forming guard ring and circuit deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·20 claims
- 3974US10756082B2Method of forming electrostatic discharge (ESD) testing structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·1 cites·20 claims
- 4073US11742236B2Structure and method for enhancing robustness of ESD deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 29, 2023·0 cites·20 claims
- 4173US10991442B2Memory device with a fuse protection circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 27, 2021·0 cites·20 claims
- 4273US7329925B2Device for electrostatic discharge protectionWINBOND ELECTRONICS CORP·Filed 2006·Granted Feb 12, 2008·5 cites·5 claims
- 4369US10269986B2Rotated STI diode on FinFET technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·1 cites·21 claims
- 4467US10284190B2Voltage detector circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·1 cites·20 claims
- 4566US10868112B2Circuit device including guard ring and method of forming guard ringTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 4663US9620957B2Electrostatic discharge (ESD) control circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 11, 2017·1 cites·20 claims
- 4762US10546850B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 4862US8692289B2Fast turn on silicon controlled rectifiers for ESD protectionSU YU-TI·Filed 2012·Granted Apr 8, 2014·2 cites·20 claims
- 4961US10854501B2Structure and method for enhancing robustness of ESD deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·0 cites·20 claims
- 5061US9281681B2ESD protection circuits and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Mar 8, 2016·1 cites·10 claims
Showing the top 50 of 68 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →