Inventor · disambiguated record
Jer-Fu Wang
Also filed as: WANG JER-FU
16 granted patents·26 pending applications·21 citations·filing 2004–2025
87Inventor score
Top patents by PatentIndex Score
42 records- 0193US11929115B2Memory device with SRAM cells assisted by non-volatile memory cells and operation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0286US12426519B2Memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 0386US2025311648A1Memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0484US12035532B2Memory array and memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·1 cites·20 claims
- 0584US2025359492A1Memory device, memory array, and n-bit memory unitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0682US12022752B2Methods of forming memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 0780US2024365689A1Memory device, memory array, and n-bit memory unitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0880US2024389299A1Dynamic random access memory devices with enhanced data retention and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0979US2025351368A1Memory structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1078US2025365982A1Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1178US2025338625A1Back-end active deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1278US2025364044A1Memory devices and methods of manufacturing and operating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1376US2024381796A1Resistive memory device with enhanced local electric field and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1476US2025323098A1Method of making self-aligned contact for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1576US2025357164A1Magnetic bonding structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1675US12069970B2Memory device, method for configuring memory cell in N-bit memory unit, and memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 1774US11903334B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·20 claims
- 1874US2025031380A13t memory with enhanced speed of operation and data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1973US2025191628A1Memory array structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2073US2024387277A1Multiple threshold voltage implementation through lanthanum incorporationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2173US2024324228A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2272US12424492B2Self-aligned contact for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·20 claims
- 2371US12402327B2Memory devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 2469US2025081622A1Back-end active deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2568US2024412991A1Magnetic bonding structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2667US12396176B23T memory with enhanced speed of operation and data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 2767US12243619B2Memory array structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2866US2024257866A1Memory devices and methods of manufacturing and operating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2965US2023157187A1Resistive memory device with enhanced local electric field and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3064US2023225132A1Memory structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3161US7337586B2Anti-seismic device with vibration-reducing units arranged in parallelLIN CHI-CHANG·Filed 2004·Granted Mar 4, 2008·18 cites·4 claims
- 3260US2023164975A1Dynamic random access memory devices with enhanced data retention and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3358US11605779B2Memory cell, method of forming the same, and semiconductor dieTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3457US2025294838A1Semiconductor devices and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3557US2025366266A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3657US2025366079A1Quantum computing semiconductor device and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3755US2024130100A1Memory device, and method for forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3854US12475942B2Integrated circuit structure with complementary field effect transistor and memory cell and method of making thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3954US2025072058A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4052US11854594B2Data processing method, data processing circuit, and computing apparatusTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4151US12356600B2SRAM memory cell device comprising ferroelectric access and storage transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 8, 2025·0 cites·20 claims
- 4248US11664279B2Multiple threshold voltage implementation through lanthanum incorporationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →