Inventor · disambiguated record
Jen-Sheng Yang
Also filed as: YANG JEN-SHENG
32 granted patents·197 citations·filing 2007–2021
96Inventor score
Top patents by PatentIndex Score
32 records- 0198US9553265B1RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 24, 2017·33 cites·20 claims
- 0298US9461245B1Bottom electrode for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 4, 2016·55 cites·20 claims
- 0397US9577009B1RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·29 cites·20 claims
- 0495US10109793B2Bottom electrode for RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·11 cites·20 claims
- 0594US10566519B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 18, 2020·8 cites·20 claims
- 0694US10163981B2Metal landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·8 cites·20 claims
- 0792US10249756B2Semiconductor device including memory and logic circuit having FETs with ferroelectric layer and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 2, 2019·9 cites·20 claims
- 0889US11751485B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·1 cites·20 claims
- 0988US8809179B2Method for reducing topography of non-volatile memory and resulting memory cellsWANG SHIH WEI·Filed 2007·Granted Aug 19, 2014·15 cites·20 claims
- 1087US9941470B2RRAM device with data storage layer having increased heightTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 10, 2018·4 cites·20 claims
- 1187US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
- 1285US11094744B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·2 cites·20 claims
- 1385US10903274B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 26, 2021·2 cites·20 claims
- 1483US11004975B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·1 cites·20 claims
- 1581US9934853B2Method and apparatus for reading RRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 3, 2018·4 cites·20 claims
- 1676US11889705B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 1776US11844286B2Flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·0 cites·20 claims
- 1876US10566387B2Interconnect landing method for RRAM technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 18, 2020·1 cites·20 claims
- 1976US10388531B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 20, 2019·1 cites·20 claims
- 2076US10158072B1Step height reduction of memory elementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·2 cites·20 claims
- 2172US11201281B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 2272US9773552B2RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 26, 2017·2 cites·20 claims
- 2366US10796759B2Method and apparatus for reading RRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·20 claims
- 2465US11678592B2Step height mitigation in resistive random access memory structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 2565US11094545B2Self-aligned insulated film for high-K metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 2664US10763426B2Method for forming a flat bottom electrode via (BEVA) top surface for memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 2764US10311952B2Method and apparatus for reading RRAM cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 4, 2019·1 cites·20 claims
- 2861US10727337B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 2958US11038108B2Step height mitigation in resistive random access memory structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 15, 2021·0 cites·20 claims
- 3058US9779947B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 3, 2017·0 cites·20 claims
- 3157US9252224B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 2, 2016·0 cites·20 claims
- 3249US10164185B2RRAM cell with PMOS access transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →