Inventor · disambiguated record
Jen-Hao Yeh
Also filed as: YEH JEN-HAO
47 granted patents·5 pending applications·121 citations·filing 2008–2023
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD17LIN WEI-CHIEH9TAIWAN SEMICONDUCTOR MFG7LEADTREND TECH CORP4ANPEC ELECTRONICS CORP3
Top patents by PatentIndex Score
52 records- 0197US10429729B2EUV radiation modification methods and systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 1, 2019·7 cites·20 claims
- 0296US10524345B2Residual gain monitoring and reduction for EUV drive laserTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 31, 2019·9 cites·20 claims
- 0393US11419203B2EUV radiation modification methods and systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 16, 2022·2 cites·20 claims
- 0493US10917959B2EUV radiation modification methods and systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·3 cites·20 claims
- 0592US9190535B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·12 cites·20 claims
- 0692US8624322B1High voltage device with a parallel resistorSU RU-YI·Filed 2012·Granted Jan 7, 2014·15 cites·20 claims
- 0791US9673323B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·6 cites·20 claims
- 0889US11800626B2Shock wave visualization for extreme ultraviolet plasma optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·1 cites·20 claims
- 0989US10980100B2Residual gain monitoring and reduction for EUV drive laserTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 13, 2021·2 cites·20 claims
- 1087US8704279B2Embedded JFETs for high voltage applicationsYEH JEN-HAO·Filed 2012·Granted Apr 22, 2014·8 cites·20 claims
- 1186US11452197B2Shock wave visualization for extreme ultraviolet plasma optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 20, 2022·2 cites·20 claims
- 1286US8575694B2Insulated gate bipolar transistor structure having low substrate leakageHUO KER HSIAO·Filed 2012·Granted Nov 5, 2013·6 cites·19 claims
- 1385US8969913B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 3, 2015·5 cites·21 claims
- 1483US8120100B2Overlapping trench gate semiconductor deviceLIN WEI-CHIEH·Filed 2009·Granted Feb 21, 2012·11 cites·8 claims
- 1579US11723141B2EUV radiation generation methods and systemsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 1679US10749006B2Trench power transistor and method of producing the sameLEADPOWER-SEMI CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·17 claims
- 1778US12114412B2Shock wave visualization for extreme ultraviolet plasma optimizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1876US9257533B2Method of making an insulated gate bipolar transistor structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·2 cites·20 claims
- 1973US8168480B2Fabricating method for forming integrated structure of IGBT and diodeLIN WEI-CHIEH·Filed 2009·Granted May 1, 2012·6 cites·9 claims
- 2072US11737200B2Residual gain monitoring and reduction for EUV drive laserTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 2172US10852191B2Light source system and polarization angle adjusting methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·1 cites·20 claims
- 2272US7867854B2Method of fabricating power semiconductor deviceANPEC ELECTRONICS CORP·Filed 2009·Granted Jan 11, 2011·4 cites·13 claims
- 2368US8198684B2Semiconductor device with drain voltage protection for ESDLIN WEI-CHIEH·Filed 2009·Granted Jun 12, 2012·4 cites·11 claims
- 2467US11069805B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 2567US9093494B2Guard structure for semiconductor structure and method of forming guard layout pattern for semiconductor layout patternTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·2 cites·20 claims
- 2664US8049273B2Semiconductor device for improving the peak induced voltage in switching converterANPEC ELECTRONICS CORP·Filed 2009·Granted Nov 1, 2011·3 cites·12 claims
- 2759US8241978B2Method of manufacturing semiconductor device having integrated MOSFET and Schottky diodeLIN WEI-CHIEH·Filed 2009·Granted Aug 14, 2012·2 cites·12 claims
- 2858US9793385B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 17, 2017·0 cites·20 claims
- 2958US9742434B1Data compression and de-compression method and data compressor and data de-compressorMEDIATEK INC·Filed 2016·Granted Aug 22, 2017·1 cites·19 claims
- 3058US9214547B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·0 cites·20 claims
- 3157US10204896B2Vertical double diffusion metal-oxide-semiconductor power deviceLEADTREND TECH CORP·Filed 2017·Granted Feb 12, 2019·1 cites·10 claims
- 3257US8384682B2Optical interactive panel and display system with optical interactive panelIND TECH RES INST·Filed 2009·Granted Feb 26, 2013·1 cites·14 claims
- 3356US10510882B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·20 claims
- 3456US9379188B2Insulated gate bipolar transistor structure having low substrate leakageTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 28, 2016·0 cites·19 claims
- 3555US12287364B2Test system and test deviceLEADPOWER SEMI CO LTD·Filed 2023·Granted Apr 29, 2025·0 cites·11 claims
- 3655US10176431B2Low-noise, ultra-low temperature dissipative devicesUNIV MARYLAND·Filed 2017·Granted Jan 8, 2019·1 cites·21 claims
- 3755US10121890B2High voltage transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 6, 2018·0 cites·20 claims
- 3855US8242537B2IGBT with fast reverse recovery time rectifier and manufacturing method thereofLIN WEI-CHIEH·Filed 2009·Granted Aug 14, 2012·1 cites·20 claims
- 3952US9257979B2Embedded JFETs for high voltage applicationsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·0 cites·20 claims
- 4050US9660108B2Bootstrap MOS for high voltage applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 4148US2009117700A1Method for Manufacturing a Trench Power TransistorLIN WEI-CHIEH·Filed 2008·Application pending·0 cites
- 4248US2009114983A1Power Transistor Capable of Decreasing Capacitance between Gate and DrainLIN WEI-CHIEH·Filed 2008·Application pending·0 cites
- 4346US12101207B2Communication apparatus and associated methodREALTEK SEMICONDUCTOR CORP·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
- 4446US9424161B2Trace capture device with common structure and related trace capture methodMEDIATEK INC·Filed 2014·Granted Aug 23, 2016·0 cites·24 claims
- 4545US7682903B1Method of forming a power deviceANPEC ELECTRONICS CORP·Filed 2008·Granted Mar 23, 2010·0 cites·11 claims
- 4644US2009061584A1Semiconductor Process for Trench Power MOSFETLIN WEI-CHIEH·Filed 2008·Application pending·0 cites
- 4744US2011084334A1Bilateral conduction semiconductor device and manufacturing method thereofLIN WEI-CHIEH·Filed 2009·Application pending·0 cites
- 4840US11069794B2Trench power transistor and method of producing the sameLEADPOWER SEMI CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·6 claims
- 4939US10580862B2High-voltage semiconductor devices with improved EAS and related manufacturing method thereofLEADTREND TECH CORP·Filed 2018·Granted Mar 3, 2020·0 cites·10 claims
- 5039US2018175190A1Vertical double diffusion metal-oxide-semiconductor power device with high voltage start-up unitLEADTREND TECH CORP·Filed 2017·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →