Inventor · disambiguated record
Jeonghyuk Yim
Also filed as: YIM JEONGHYUK
15 granted patents·7 pending applications·16 citations·filing 2018–2025
87Inventor score
Files withSAMSUNG ELECTRONICS CO LTD22
Top patents by PatentIndex Score
22 records- 0193US12170322B2Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Dec 17, 2024·2 cites·20 claims
- 0292US12356665B2Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 8, 2025·2 cites·18 claims
- 0391US10784260B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·7 cites·20 claims
- 0489US11769728B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 26, 2023·2 cites·9 claims
- 0578US11094586B2Semiconductor device including interconnections having different structures and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·3 cites·20 claims
- 0674US2025311304A1Stacked transistors having an isolation region therebetween and a common gate electrode, and related fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 0773US12464803B2Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chipSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·8 claims
- 0873US2025063765A1Devices including stacked nanosheet transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 0972US12262560B2Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 25, 2025·0 cites·11 claims
- 1072US2025254925A1Integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 1170US12142564B2Backside power distribution network semiconductor package and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·11 claims
- 1267US12310062B2Integrated circuit devices including stacked transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted May 20, 2025·0 cites·15 claims
- 1362US12419086B2Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Sep 16, 2025·0 cites·20 claims
- 1462US11901240B2Multi-fin vertical field effect transistor and single-fin vertical field effect transistor on a single integrated circuit chipSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Feb 13, 2024·0 cites·7 claims
- 1561US11923365B2Integrated circuit devices including transistor stacks having different threshold voltages and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·11 claims
- 1661US11557656B2Semiconductor device having a capping pattern on a gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·19 claims
- 1756US2025063804A1Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1854US2024250000A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 1951US10811505B2Gate electrode having upper and lower capping patternsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 20, 2020·0 cites·16 claims
- 2051US2024222451A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2150US2024128319A1Integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2245US10950709B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 16, 2021·0 cites·19 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →