Inventor · disambiguated record
Jeng-Wei Yu
Also filed as: YU JENG · YU JENG-WEI
22 granted patents·7 pending applications·30 citations·filing 2003–2025
92Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD22OPTO TECH CORP3PENG LUNG-HAN2LIN CHEN-YEN1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
29 records- 0196US11948971B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 2, 2024·3 cites·20 claims
- 0292US11101347B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·6 cites·20 claims
- 0389US11037826B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 15, 2021·2 cites·20 claims
- 0488US8409892B2Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substratesPENG LUNG-HAN·Filed 2011·Granted Apr 2, 2013·9 cites·20 claims
- 0587US10546784B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·3 cites·20 claims
- 0685US12068395B2Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 0785US2025351404A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0883US8809832B1Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structureOPTO TECH CORP·Filed 2013·Granted Aug 19, 2014·4 cites·14 claims
- 0981US2025301735A1Transistors with stacked semiconductor layers as channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1080US2025344461A1Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1178US12363993B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 1278US2024363729A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1376US10879128B2Semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 1476US2025311389A1Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1576US2024355826A1Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1675US12439657B2Confined source/drain epitaxy regions and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 1774US12057450B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 1874US11908742B2Semiconductor device having merged epitaxial features with arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·0 cites·20 claims
- 1974US2024363418A1Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2073US12389649B2Transistors with stacked semiconductor layers as channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 2167US11652105B2Epitaxy regions with large landing areas for contact plugsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 2263US12094778B2Fin field-effect transistor device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 2363US11257908B2Transistors with stacked semiconductor layers as channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·20 claims
- 2459US10049936B2Semiconductor device having merged epitaxial features with Arc-like bottom surface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 14, 2018·0 cites·20 claims
- 2558US8871546B2Method of selective photo-enhanced wet oxidation for nitride layer regrowth on substrates and associated structureOPTO TECH CORP·Filed 2014·Granted Oct 28, 2014·0 cites·2 claims
- 2654US8679883B2Method of separating nitride films from growth substrates by selective photo-enhanced wet oxidation and associated semiconductor structureOPTO TECH CORP·Filed 2013·Granted Mar 25, 2014·0 cites·12 claims
- 2749US8481353B2Method of separating nitride films from the growth substrates by selective photo-enhanced wet oxidationPENG LUNG-HAN·Filed 2011·Granted Jul 9, 2013·0 cites·13 claims
- 2834US7001784B2Method to control spacer widthTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Feb 21, 2006·0 cites·39 claims
- 2930US8487325B2Light emitting diode with large viewing angle and fabricating method thereofLIN CHEN-YEN·Filed 2012·Granted Jul 16, 2013·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →