Inventor · disambiguated record
Jhon Jhy Liaw
Also filed as: LIAW JHON J · LIAW JHON JHY
734 granted patents·244 pending applications·8,767 citations·filing 1995–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD753TAIWAN SEMICONDUCTOR MFG163LIAW JHON-JHY50PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC3LIN TZU-KUEI2
Top patents by PatentIndex Score
978 records- 0199US11764287B2Multi-gate transistor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·9 cites·20 claims
- 0299US11355363B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·8 cites·20 claims
- 0399US11355502B2Semiconductor device with gate recess and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·6 cites·20 claims
- 0499US11302692B2Semiconductor devices having gate dielectric layers of varying thicknesses and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·8 cites·16 claims
- 0599US10157987B1Fin-based strap cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·47 cites·23 claims
- 0699US9805985B2Method of manufacturing semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·46 cites·20 claims
- 0799US9640540B1Structure and method for an SRAM circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 2, 2017·70 cites·20 claims
- 0899US9613953B2Semiconductor device, semiconductor device layout, and method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 4, 2017·74 cites·20 claims
- 0999US9362292B1Two-port SRAM cell structure for vertical devicesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·41 cites·20 claims
- 1099US9257439B2Structure and method for FinFET SRAMTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·56 cites·20 claims
- 1199US9251888B1SRAM cells with vertical gate-all-round MOSFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 2, 2016·70 cites·20 claims
- 1299US9236300B2Contact plugs in SRAM cells and the method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 12, 2016·1.4k cites·20 claims
- 1399US9218872B1Memory chip and layout design for manufacturing sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 22, 2015·85 cites·20 claims
- 1499US8908421B2Methods and apparatus for FinFET SRAM arrays in integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 9, 2014·90 cites·20 claims
- 1599US8675397B2Cell structure for dual-port SRAMLIAW JHON JHY·Filed 2010·Granted Mar 18, 2014·72 cites·20 claims
- 1699US7485934B2Integrated semiconductor structure for SRAM cellsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Feb 3, 2009·121 cites·14 claims
- 1798US12021023B2Semiconductor device with source/drain viaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·2 cites·20 claims
- 1898US11996360B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 1998US11764112B2Methods for fabricating FinFETs having different fin numbers and corresponding FinFETs thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·4 cites·20 claims
- 2098US11659703B2Integrated circuit with embedded high-density and high-current SRAM macrosTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·4 cites·20 claims
- 2198US11462614B2Semiconductor devices and methods of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·5 cites·20 claims
- 2298US11444089B2Gate-all-around field effect transistors in integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 13, 2022·4 cites·20 claims
- 2398US11437373B2Multi-gate device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 2498US11374088B2Leakage reduction in gate-all-around devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·4 cites·20 claims
- 2598US11158632B1Fin-based strap cell structure for improving memory performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 26, 2021·5 cites·20 claims
- 2698US10756114B2Semiconductor circuit with metal structure and manufacturing methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 25, 2020·16 cites·20 claims
- 2798US10276581B1Integrated circuit chip and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·23 cites·20 claims
- 2898US10115825B1Structure and method for FinFET device with asymmetric contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 30, 2018·23 cites·20 claims
- 2998US9865542B2Interconnect structure with misaligned metal lines coupled using different interconnect layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·32 cites·20 claims
- 3098US9793273B2Fin-based semiconductor device including a metal gate diffusion break structure with a conformal dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 17, 2017·65 cites·20 claims
- 3198US9691471B2SRAM cells with vertical gate-all-round MOSFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 27, 2017·32 cites·19 claims
- 3298US9672903B2Two-port SRAM connection structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 6, 2017·22 cites·20 claims
- 3398US9646973B2Dual-port SRAM cell structure with vertical devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·29 cites·20 claims
- 3498US9515077B1Layout of static random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·41 cites·20 claims
- 3598US9425201B2Cell layout for SRAM FinFET transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2016·26 cites·20 claims
- 3698US9041115B2Structure for FinFETsLIAW JHON-JHY·Filed 2012·Granted May 26, 2015·37 cites·20 claims
- 3798US9012287B2Cell layout for SRAM FinFET transistorsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Apr 21, 2015·54 cites·20 claims
- 3898US8693235B2Methods and apparatus for finFET SRAM arrays in integrated circuitsLIAW JHON-JHY·Filed 2011·Granted Apr 8, 2014·49 cites·20 claims
- 3998US8629512B2Gate stack of fin field effect transistor with slanted sidewallsLIAW JHON JHY·Filed 2012·Granted Jan 14, 2014·36 cites·20 claims
- 4098US8625334B2Memory cellLIAW JHON-JHY·Filed 2011·Granted Jan 7, 2014·53 cites·20 claims
- 4198US8399931B2Layout for multiple-fin SRAM cellLIAW JHON JHY·Filed 2010·Granted Mar 19, 2013·437 cites·17 claims
- 4298US8212295B2ROM cell circuit for FinFET devicesLIAW JHON JHY·Filed 2010·Granted Jul 3, 2012·39 cites·20 claims
- 4398US7354833B2Method for improving threshold voltage stability of a MOS deviceTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Apr 8, 2008·120 cites·18 claims
- 4497US12089391B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·3 cites·20 claims
- 4597US12041767B2Fuse cell structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·2 cites·20 claims
- 4697US11950401B2Two-port SRAM cells with asymmetric M1 metalizationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·3 cites·20 claims
- 4797US11948940B2Multi-gate device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 4897US11728402B2Structure and method for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·2 cites·20 claims
- 4997US11728382B2Gate all around transistors with different threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·2 cites·20 claims
- 5097US11710522B2SRAM arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 25, 2023·2 cites·20 claims
Showing the top 50 of 978 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →