Inventor · disambiguated record
Jhu-Min Song
Also filed as: SONG JHU-MIN
13 granted patents·17 pending applications·13 citations·filing 2021–2025
86Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30
Top patents by PatentIndex Score
30 records- 0198US11410995B1Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 9, 2022·6 cites·20 claims
- 0297US11677022B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·4 cites·20 claims
- 0396US12021140B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·2 cites·20 claims
- 0493US12500193B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 16, 2025·1 cites·20 claims
- 0587US12356658B2Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 8, 2025·0 cites·20 claims
- 0687US2025311292A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0778US2024371865A1Semiconductor structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0877US2025318261A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0977US2025331221A1High-voltage semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1076US12100706B2Semiconductor structure and method of forming thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 1176US2025311357A1Method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1273US2024379664A1Checkerboard dummy design for epitaxial open ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1373US2025056877A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1470US12426296B2High-voltage semiconductor devices and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 1569US12369377B2Semiconductor structure and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1669US11710712B2Semiconductor device and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
- 1769US2025210614A1Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1867US12396252B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 19, 2025·0 cites·20 claims
- 1967US12349454B2Checkerboard dummy design for epitaxial open ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 2065US12159870B2Semiconductor structure and forming method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 2162US12272686B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 8, 2025·0 cites·20 claims
- 2258US2025221005A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2358US2025374589A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2458US2025227963A1Transistor structure with higher junction breakdown voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2554US2025081509A1Gate dielectric features in high-voltage ic devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2653US2025107215A1Front-end-of-line (feol) capacitor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2752US2024047549A1Semiconductor device with supporting structures and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2852US2025089324A1Methods for forming gate oxide layer for high-voltage transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2951US2024047542A1Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3050US2023299164A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →