Inventor · disambiguated record
Jhen-Yu Tsai
Also filed as: TSAI JHEN-YU
42 granted patents·23 pending applications·29 citations·filing 2017–2025
96Inventor score
Files withNANYA TECHNOLOGY CORP65
Top patents by PatentIndex Score
65 records- 0197US11832440B2Method of forming memory deviceNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 28, 2023·3 cites·7 claims
- 0295US12342571B2Method for manufacturing semiconductor device with passing gateNANYA TECHNOLOGY CORP·Filed 2022·Granted Jun 24, 2025·2 cites·20 claims
- 0393US11205651B2Memory structure and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Dec 21, 2021·3 cites·12 claims
- 0491US11482419B2Method for preparing transistor deviceNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 25, 2022·2 cites·8 claims
- 0588US11127859B2Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2019·Granted Sep 21, 2021·3 cites·12 claims
- 0688US10818800B2Semiconductor structure and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2018·Granted Oct 27, 2020·5 cites·14 claims
- 0787US2025301633A1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 0885US12310002B2Semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2024·Granted May 20, 2025·0 cites·18 claims
- 0985US2025301753A1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 1084US11217589B2Semiconductor device and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Jan 4, 2022·2 cites·7 claims
- 1184US2025126873A1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1283US10566432B2Transistor deviceNANYA TECHNOLOGY CORP·Filed 2018·Granted Feb 18, 2020·2 cites·15 claims
- 1383US2025031431A1Method for manufacturing semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1482US11417662B2Memory device and method of forming the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 16, 2022·1 cites·12 claims
- 1581US12484284B2Buried gate semiconductor device with reduced gate induced drain leakageNANYA TECHNOLOGY CORP·Filed 2023·Granted Nov 25, 2025·0 cites·8 claims
- 1680US10468490B2Transistor device and semiconductor layout structureNANYA TECHNOLOGY CORP·Filed 2017·Granted Nov 5, 2019·4 cites·9 claims
- 1779US2024098979A1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 1878US2024250187A1Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1977US12426339B2Buried gate semiconductor device having a dielectric layer between two electrodesNANYA TECHNOLOGY CORP·Filed 2022·Granted Sep 23, 2025·0 cites·16 claims
- 2077US2025220883A1Semiconductor device including vertical transistor and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2177US2025220882A1Semiconductor device including vertical transistor and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2276US12268029B2Method for manufacturing semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2022·Granted Apr 1, 2025·0 cites·6 claims
- 2376US2025015164A1Semiconductor device with spacer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2475US12029028B2Method of manufacturing semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2021·Granted Jul 2, 2024·0 cites·9 claims
- 2575US10825898B2Semiconductor layout structure including asymmetrical channel regionNANYA TECHNOLOGY CORP·Filed 2019·Granted Nov 3, 2020·1 cites·8 claims
- 2675US2025267852A1Memory structure including low dielectric constant capping layerNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 2775US2024098978A1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 2874US12477780B2Semiconductor structure including multiple gate electrodesNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 18, 2025·0 cites·19 claims
- 2974US2025015163A1Semiconductor device with spacer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 3073US11984511B2Manufacturing method of semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2021·Granted May 14, 2024·0 cites·6 claims
- 3172US12328868B2Memory structure including low dielectric constant capping layerNANYA TECHNOLOGY CORP·Filed 2022·Granted Jun 10, 2025·0 cites·16 claims
- 3272US11659704B2Method for manufacturing semiconductor structure with vertical gate transistorNANYA TECHNOLOGY CORP·Filed 2022·Granted May 23, 2023·0 cites·20 claims
- 3371US10559661B2Transistor device and semiconductor layout structure including asymmetrical channel regionNANYA TECHNOLOGY CORP·Filed 2018·Granted Feb 11, 2020·1 cites·11 claims
- 3471US2024204074A1Semiconductor structure including multiple gate electrodes and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 3570US12274050B2Semiconductor device with passing gateNANYA TECHNOLOGY CORP·Filed 2022·Granted Apr 8, 2025·0 cites·17 claims
- 3668US11721759B2Method for forming gate metal structure having portions with different heightsNANYA TECHNOLOGY CORP·Filed 2022·Granted Aug 8, 2023·0 cites·10 claims
- 3767US12457730B2Method for manufacturing semiconductor device having buried gate structureNANYA TECHNOLOGY CORP·Filed 2022·Granted Oct 28, 2025·0 cites·17 claims
- 3865US12317571B2Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2022·Granted May 27, 2025·0 cites·10 claims
- 3965US11424360B1Semiconductor device and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2021·Granted Aug 23, 2022·0 cites·14 claims
- 4064US11640979B2Method of manufacturing semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2021·Granted May 2, 2023·0 cites·4 claims
- 4162US12477806B2Semiconductor device having buried gate structureNANYA TECHNOLOGY CORP·Filed 2022·Granted Nov 18, 2025·0 cites·17 claims
- 4262US11563007B2Semiconductor structure with vertical gate transistorNANYA TECHNOLOGY CORP·Filed 2020·Granted Jan 24, 2023·0 cites·14 claims
- 4362US10985254B2Semiconductor device and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Apr 20, 2021·0 cites·8 claims
- 4462US2025133718A1Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4562US2025120070A1Memory device and fabrication method thereofNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4661US11978785B2Method of manufacturing semiconductor structure having a fin featureNANYA TECHNOLOGY CORP·Filed 2021·Granted May 7, 2024·0 cites·18 claims
- 4761US2025089240A1Memory device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4860US12009424B2Semiconductor device, and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2021·Granted Jun 11, 2024·0 cites·16 claims
- 4959US10461162B2Transistor deviceNANYA TECHNOLOGY CORP·Filed 2018·Granted Oct 29, 2019·0 cites·7 claims
- 5059US2024298437A1Semiconductor device and manufacturing method thereofNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
Showing the top 50 of 65 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Jhen-Yu Tsai files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →