Inventor · disambiguated record
Jhong-Sheng Wang
Also filed as: WANG JHONG-SHENG
25 granted patents·3 pending applications·32 citations·filing 2014–2025
93Inventor score
Top patents by PatentIndex Score
28 records- 0197US11672185B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·2 cites·20 claims
- 0296US11165012B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 2, 2021·5 cites·20 claims
- 0394US11616124B2Method of making fin field effect transistor (FinFET) deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·2 cites·15 claims
- 0494US11289538B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·3 cites·20 claims
- 0592US10032869B2Fin field effect transistor (FinFET) device having position-dependent heat generation and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 24, 2018·6 cites·18 claims
- 0690US12382841B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 5, 2025·0 cites·20 claims
- 0790US2025331429A1Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0888US12035636B2Magnetic device and magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 0987US9373712B2Transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 21, 2016·7 cites·6 claims
- 1086US10916286B2Assisted write method for MRAM testing and field applicationsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 9, 2021·3 cites·20 claims
- 1184US12302587B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1282US2025248049A1Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1381US10685693B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·3 cites·20 claims
- 1480US11238911B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·1 cites·20 claims
- 1577US12300293B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 1676US11825664B2Memory device and semiconductor die, and method of fabricating memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·0 cites·20 claims
- 1775US12046638B2Fin field effect transistor (FinFET) device having position-dependent heat generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·0 cites·16 claims
- 1871US11727974B2Method for writing to magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 15, 2023·0 cites·20 claims
- 1963US11244714B2Assisted write method for magnetic random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 8, 2022·0 cites·20 claims
- 2062US11631796B2Integrated thermoelectric devices in Fin FET technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 18, 2023·0 cites·20 claims
- 2162US11107889B2Fin field effect transistor (FinFET) device having position-dependent heat generationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 31, 2021·0 cites·20 claims
- 2255US2020176327A1Method of making breakdown resistant semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Application pending·0 cites
- 2351US10553494B2Breakdown resistant semiconductor apparatus and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·0 cites·18 claims
- 2451US9317647B2Method of designing a circuit and system for implementing the methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·0 cites·20 claims
- 2549US9691894B2Transistor having gate, first metal-containing material and second metal-containing material with different work functionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 27, 2017·0 cites·20 claims
- 2647US9977072B2Semiconductor structure and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·0 cites·20 claims
- 2745US11424399B2Integrated thermoelectric devices in Fin FET technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 23, 2022·0 cites·20 claims
- 2844US10510410B2Method for programming resistive memory cell with AC perturbation AC signal and nonvolatile memory device thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →